Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure
Chowdhury, Srabanti, Mishra, Umesh K.
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
Romanczyk, Brian, Zheng, Xun, Guidry, Matthew, Li, Haoran, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
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Journal Article
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
Koksaldi, Onur S., Haller, Jeffrey, Li, Haoran, Romanczyk, Brian, Guidry, Matthew, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
Shrestha, Pawana, Guidry, Matthew, Romanczyk, Brian, Hatui, Nirupam, Wurm, Christian, Krishna, Athith, Pasayat, Shubhra S., Karnaty, Rohit R., Keller, Stacia, Buckwalter, James F., Mishra, Umesh K.
Published in IEEE electron device letters (01.05.2020)
Published in IEEE electron device letters (01.05.2020)
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Journal Article
High breakdown voltage p-n diodes on GaN on sapphire by MOCVD
Gupta, Chirag, Enatsu, Yuuki, Gupta, Geetak, Keller, Stacia, Mishra, Umesh K.
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
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Journal Article
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
Cruz, Samantha C., Keller, Stacia, Mates, Thomas E., Mishra, Umesh K., DenBaars, Steven P.
Published in Journal of crystal growth (15.07.2009)
Published in Journal of crystal growth (15.07.2009)
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Journal Article
N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning
Collins, Henry, Akso, Emre, Clymore, Christopher J., Khan, Kamruzzaman, Hamwey, Robert, Hatui, Nirupam, Guidry, Matthew, Keller, Stacia, Mishra, Umesh K.
Published in Electronics letters (01.07.2024)
Published in Electronics letters (01.07.2024)
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Journal Article
N-polar GaN epitaxy and high electron mobility transistors
Wong, Man Hoi, Keller, Stacia, Dasgupta, Nidhi, Sansaptak, Denninghoff, Daniel J, Kolluri, Seshadri, Brown, David F, Lu, Jing, Fichtenbaum, Nicholas A, Ahmadi, Elaheh, Singisetti, Uttam, Chini, Alessandro, Rajan, Siddharth, DenBaars, Steven P, Speck, James S, Mishra, Umesh K
Published in Semiconductor science and technology (01.07.2013)
Published in Semiconductor science and technology (01.07.2013)
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Journal Article
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
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Journal Article
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
Chichibu, Shigefusa F, Uedono, Akira, Onuma, Takeyoshi, Haskell, Benjamin A, Chakraborty, Arpan, Koyama, Takahiro, Fini, Paul T, Keller, Stacia, DenBaars, Steven P, Speck, James S, Mishra, Umesh K, Nakamura, Shuji, Yamaguchi, Shigeo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Han, Jung, Sota, Takayuki
Published in Nature materials (01.10.2006)
Published in Nature materials (01.10.2006)
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Journal Article
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
Bisi, Davide, De Santi, Carlo, Meneghini, Matteo, Wienecke, Steven, Guidry, Matt, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K., Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Growth of high purity N-polar (In,Ga)N films
Lund, Cory, Nakamura, Shuji, DenBaars, Steven P., Mishra, Umesh K., Keller, Stacia
Published in Journal of crystal growth (15.04.2017)
Published in Journal of crystal growth (15.04.2017)
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Journal Article
Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
Pasayat, Shubhra S, Gupta, Chirag, Wang, Yifan, DenBaars, Steven P, Nakamura, Shuji, Keller, Stacia, Mishra, Umesh K
Published in Materials (04.01.2020)
Published in Materials (04.01.2020)
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Journal Article
Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N
Kayede, Emmanuel, Akso, Emre, Romanczyk, Brian, Hatui, Nirupam, Sayed, Islam, Khan, Kamruzzaman, Collins, Henry, Keller, Stacia, Mishra, Umesh K.
Published in Crystals (Basel) (01.06.2024)
Published in Crystals (Basel) (01.06.2024)
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Journal Article