Improvement in Long-Term and High-Temperature Retention Stability of Ferroelectric Field-Effect Memory Transistors With Metal-Ferroelectric-Metal-Insulator-Semiconductor Gate-Stacks Using Al-Doped HfO2 Thin Films
Yoon, So-Jung, Min, Dae-Hong, Moon, Seung-Eon, Park, Kun Sik, Won, Jong Il, Yoon, Sung-Min
Published in IEEE transactions on electron devices (01.02.2020)
Published in IEEE transactions on electron devices (01.02.2020)
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Journal Article
Sensitivities of input parameters for predicting stability of soil slope
Choo, Hyunwook, Min, Dae-Hong, Sung, Joo Hyun, Yoon, Hyung-Koo
Published in Bulletin of engineering geology and the environment (01.12.2019)
Published in Bulletin of engineering geology and the environment (01.12.2019)
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Journal Article
Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf0.5Zr0.5O2 thin films controlled by oxygen partial pressures during the sputtering deposition process
Dae-Hong, Min, Tae-Hyun Ryu, So-Jung, Yoon, Moon, Seung-Eon, Sung-Min, Yoon
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2020)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2020)
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Journal Article
Design strategies for improvement in nonvolatile memory characteristics of metal-ferroelectric-metal-insulator-semiconductor capacitors using ferroelectric Hf0.5Zr0.5O2 thin films
Min, Dae-Hong, Moon, Seung-Eon, Yoon, Sung-Min
Published in Journal of physics. D, Applied physics (06.01.2020)
Published in Journal of physics. D, Applied physics (06.01.2020)
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Journal Article