Voltage-margin limiting mechanisms of AlScN-based HEMTs
Döring, P., Krause, S., Waltereit, P., Brückner, P., Leone, S., Streicher, I., Mikulla, M., Quay, R.
Published in Applied physics letters (17.07.2023)
Published in Applied physics letters (17.07.2023)
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Journal Article
Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers
Neininger, Philipp, John, L., Zink, M., Meder, D., Kuri, M., Tessmann, A., Friesicke, C., Mikulla, M., Quay, R., Zwick, Thomas
Published in IEEE microwave and wireless components letters (01.06.2022)
Published in IEEE microwave and wireless components letters (01.06.2022)
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Journal Article
Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs
Doring, P., Basler, M., Reiner, R., Monch, S., Driad, R., Dammann, M., Mikulla, M., Quay, R.
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs
Wespel, M., Polyakov, V. M., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.
Published in IEEE transactions on electron devices (01.02.2016)
Published in IEEE transactions on electron devices (01.02.2016)
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Journal Article
Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies
Neininger, P., Mikulla, M., Döring, P., Dammann, M., Thome, F., Krause, S., Schwantuschke, D., Brückner, P., Friesicke, C., Quay, R.
Published in e-Prime (01.06.2023)
Published in e-Prime (01.06.2023)
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Journal Article
Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Gütle, F, Polyakov, V M, Baeumler, M, Benkhelifa, F, Müller, S, Dammann, M, Cäsar, M, Quay, R, Mikulla, M, Wagner, J, Ambacher, O
Published in Semiconductor science and technology (01.12.2012)
Published in Semiconductor science and technology (01.12.2012)
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Journal Article
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Wespel, M., Baeumler, M., Polyakov, V., Dammann, M., Reiner, R., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.
Published in Microelectronics and reliability (01.12.2014)
Published in Microelectronics and reliability (01.12.2014)
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Journal Article
Conference Proceeding
GaN HEMTs and MMICs for space applications
Waltereit, P, Bronner, W, Quay, R, Dammann, M, Cäsar, M, Müller, S, Reiner, R, Brückner, P, Kiefer, R, van Raay, F, Kühn, J, Musser, M, Haupt, C, Mikulla, M, Ambacher, O
Published in Semiconductor science and technology (01.07.2013)
Published in Semiconductor science and technology (01.07.2013)
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Journal Article
Tapered diode lasers at 976 nm with 8 W nearly diffraction limited output power
KELEMEN, M. T, WEBER, J, KAUFEL, G, BIHLMANN, G, MORITZ, R, MIKULLA, M, WEIMANN, G
Published in Electronics letters (01.09.2005)
Published in Electronics letters (01.09.2005)
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Journal Article
Dual-Gate GaN MMICs for MM-Wave Operation
Quay, R, Tessmann, A, Kiefer, R, Maroldt, S, Haupt, C, Nowotny, U, Weber, R, Massler, H, Schwantuschke, D, Seelmann-Eggebert, M, Leuther, A, Mikulla, M, Ambacher, O
Published in IEEE microwave and wireless components letters (01.02.2011)
Published in IEEE microwave and wireless components letters (01.02.2011)
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Journal Article
Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications
Brückner, Peter, Kiefer, R., Haupt, C., Leuther, A., Müller, S., Quay, R., Schwantuschke, D., Mikulla, M., Ambacher, O.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs
Cäsar, M., Dammann, M., Polyakov, V., Waltereit, P., Quay, R., Mikulla, M., Ambacher, O.
Published in Microelectronics and reliability (01.02.2011)
Published in Microelectronics and reliability (01.02.2011)
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Journal Article
GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability
Waltereit, P., Bronner, W., Quay, R., Dammann, M., Kiefer, R., Müller, S., Musser, M., Kühn, J., Raay, F. van, Seelmann, M., Mikulla, M., Ambacher, O., Rijs, F. van, Rödle, T., Riepe, K.
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Journal Article
Conference Proceeding
14xx-nm high brightness tapered diode lasers grown by solid-source MBE
Kallenbach, S., Aidam, R., Losch, R., Kaufel, G., Kelemen, M.T., Mikulla, M., Weimann, G.
Published in IEEE photonics technology letters (01.03.2006)
Published in IEEE photonics technology letters (01.03.2006)
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Journal Article
High-power 1.9-μm diode laser arrays with reduced far-field angle
Kelemen, M.T., Weber, J., Rattunde, M., Kaufel, G., Schmitz, J., Moritz, R., Mikulla, M., Wagner, J.
Published in IEEE photonics technology letters (15.02.2006)
Published in IEEE photonics technology letters (15.02.2006)
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Journal Article
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Dammann, M., Pletschen, W., Waltereit, P., Bronner, W., Quay, R., Müller, S., Mikulla, M., Ambacher, O., van der Wel, P.J., Murad, S., Rödle, T., Behtash, R., Bourgeois, F., Riepe, K., Fagerlind, M., Sveinbjörnsson, E.Ö.
Published in Microelectronics and reliability (01.05.2009)
Published in Microelectronics and reliability (01.05.2009)
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Journal Article
Conference Proceeding
High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Waltereit, P., Bronner, W., Quay, R., Dammann, M., Müller, S., Kiefer, R., Raynor, B., Mikulla, M., Weimann, G.
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
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Journal Article
Conference Proceeding
Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
Waltereit, P., Bronner, W., Quay, R., Dammann, M., Müller, S., Köhler, K., Mikulla, M., Ambacher, O., Harm, L., Lorenzini, M., Rödle, T., Riepe, K., Bellmann, K., Buchheim, C., Goldhahn, R.
Published in Physica status solidi. C (01.10.2010)
Published in Physica status solidi. C (01.10.2010)
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Journal Article
GaSb-based tapered diode lasers at 1.93 [mu]m with 1.5-W nearly diffraction-limited power
C. Pfahler, C. Pfahler, G. Kaufel, G. Kaufel, M.T. Kelemen, M.T. Kelemen, M. Mikulla, M. Mikulla, M. Rattunde, M. Rattunde, J. Schmitz, J. Schmitz, J. Wagner, J. Wagner
Published in IEEE photonics technology letters (15.03.2006)
Published in IEEE photonics technology letters (15.03.2006)
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Journal Article
A coplanar X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate
van Raay, F., Quay, R., Kiefer, R., Benkhelifa, F., Raynor, B., Pletschen, W., Kuri, M., Massler, H., Muller, S., Dammann, M., Mikulla, M., Schlechtweg, M., Weimann, G.
Published in IEEE microwave and wireless components letters (01.07.2005)
Published in IEEE microwave and wireless components letters (01.07.2005)
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Journal Article