High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM
Iso, Kenji, Ikeda, Hirotaka, Mochizuki, Tae, Mikawa, Yutaka, Izumisawa, Satoru
Published in Applied physics express (16.07.2020)
Published in Applied physics express (16.07.2020)
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High-quality, 2-inch-diameter m-plane GaN substrates grown by hydride vapor phase epitaxy on acidic ammonothermal seeds
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Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Thermal annealing effects on SCAATTM substrate grown toward the c- and m-directions
Iso, Kenji, Mikawa, Yutaka, Ikeda, Hirotaka, Hotta, Kazuhiro, Mochizuki, Tae, Izumisawa, Satoru
Published in Applied physics express (15.11.2019)
Published in Applied physics express (15.11.2019)
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Vacancies and electron trapping centers in acidic ammonothermal GaN probed by a monoenergetic positron beam
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Published in Journal of crystal growth (15.08.2016)
Published in Journal of crystal growth (15.08.2016)
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Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer
Kojima, Kazunobu, Tsukada, Yusuke, Furukawa, Erika, Saito, Makoto, Mikawa, Yutaka, Kubo, Shuichi, Ikeda, Hirotaka, Fujito, Kenji, Uedono, Akira, Chichibu, Shigefusa F.
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Numerical simulation of natural convection heat transfer in a ZnO single-crystal growth hydrothermal autoclave—Effects of fluid properties
Masuda, Yoshio, Suzuki, Akira, Mikawa, Yutaka, Yokoyama, Chiaki, Tsukada, Takao
Published in Journal of crystal growth (15.01.2009)
Published in Journal of crystal growth (15.01.2009)
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Conference Proceeding
High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAAT TM
Iso, Kenji, Ikeda, Hirotaka, Mochizuki, Tae, Mikawa, Yutaka, Izumisawa, Satoru
Published in Applied physics express (01.08.2020)
Published in Applied physics express (01.08.2020)
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Journal Article
Thermal annealing effects on SCAAT TM substrate grown toward the c - and m -directions
Iso, Kenji, Mikawa, Yutaka, Ikeda, Hirotaka, Hotta, Kazuhiro, Mochizuki, Tae, Izumisawa, Satoru
Published in Applied physics express (01.12.2019)
Published in Applied physics express (01.12.2019)
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질화 갈륨 결정, 질화 갈륨 기판 및 질화 갈륨 기판의 제조 방법
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Year of Publication 20.10.2023
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GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
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Year of Publication 28.01.2021
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C PLANE GaN SUBSTRATE
KAWABATA SHINICHIRO, MIKAWA YUTAKA, NAMIDA HIDEO, MOCHIZUKI TAE, FUJISAWA HIDEO
Year of Publication 17.12.2020
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Year of Publication 17.12.2020
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GaN SINGLE CRYSTAL
KAWABATA SHINICHIRO, MIKAWA YUTAKA, NAMIDA HIDEO, MOCHIZUKI TAE, FUJISAWA HIDEO
Year of Publication 22.10.2020
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Year of Publication 22.10.2020
Patent
Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method
Kojima, Kazunobu, Tsukada, Yusuke, Furukawa, Erika, Saito, Makoto, Mikawa, Yutaka, Kubo, Shuichi, Ikeda, Hirotaka, Fujito, Kenji, Uedono, Akira, Chichibu, Shigefusa F.
Published in Applied physics express (01.09.2015)
Published in Applied physics express (01.09.2015)
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