Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics
Migita, Shinji, Ota, Hiroyuki, Yamada, Hiroyuki, Shibuya, Keisuke, Sawa, Akihito, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
Get full text
Journal Article
Ferroelectric phase stabilization of HfO2 by nitrogen doping
Xu, Lun, Nishimura, Tomonori, Shibayama, Shigehisa, Yajima, Takeaki, Migita, Shinji, Toriumi, Akira
Published in Applied physics express (01.09.2016)
Published in Applied physics express (01.09.2016)
Get full text
Journal Article
Accelerated ferroelectric phase transformation in HfO2/ZrO2 nanolaminates
Migita, Shinji, Ota, Hiroyuki, Asanuma, Shutaro, Morita, Yukinori, Toriumi, Akira
Published in Applied physics express (01.05.2021)
Published in Applied physics express (01.05.2021)
Get full text
Journal Article
Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks
Nishimura, Tomonori, Xu, Lun, Shibayama, Shigehisa, Yajima, Takeaki, Migita, Shinji, Toriumi, Akira
Published in Japanese Journal of Applied Physics (06.06.2016)
Published in Japanese Journal of Applied Physics (06.06.2016)
Get full text
Journal Article
Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments
Migita, Shinji, Ota, Hiroyuki, Shibuya, Keisuke, Yamada, Hiroyuki, Sawa, Akihito, Matsukawa, Takashi, Toriumi, Akira
Published in Japanese Journal of Applied Physics (05.03.2019)
Published in Japanese Journal of Applied Physics (05.03.2019)
Get full text
Journal Article
Thermal stability of ferroelectricity in hafnium–zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate transistor applications
Mohit, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Tokumitsu, Eisuke
Published in Applied physics express (01.04.2021)
Published in Applied physics express (01.04.2021)
Get full text
Journal Article
Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal-insulator-semiconductor gate stack structures using Hf0.5Zr0.5O2 films
Migita, Shinji, Ota, Hiroyuki, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.11.2019)
Published in Japanese Journal of Applied Physics (01.11.2019)
Get full text
Journal Article
Impact of reduced pressure crystallization on ferroelectric properties in hafnium-zirconium dioxide films deposited by sputtering
Hara, Yuki, Mohit, Murakami, Tatsuya, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Tokumitsu, Eisuke
Published in Japanese Journal of Applied Physics (01.11.2021)
Published in Japanese Journal of Applied Physics (01.11.2021)
Get full text
Journal Article
Material and device engineering in fully depleted silicon-on-insulator transistors to realize a steep subthreshold swing using negative capacitance
Ota, Hiroyuki, Migita, Shinji, Hattori, Junichi, Fukuda, Koichi, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.08.2016)
Published in Japanese Journal of Applied Physics (01.08.2016)
Get full text
Journal Article
Enhancement of ferroelectricity in sputtered HZO thin films by catalytically generated atomic hydrogen treatment
Mohit, Wen, Yuli, Hara, Yuki, Migita, Shinji, Ota, Hiroyuki, Morita, Yukinori, Ohdaira, Keisuke, Tokumitsu, Eisuke
Published in Japanese Journal of Applied Physics (01.07.2022)
Published in Japanese Journal of Applied Physics (01.07.2022)
Get full text
Journal Article
Structural advantages of silicon-on-insulator FETs over FinFETs in steep subthreshold-swing operation in ferroelectric-gate FETs
Ota, Hiroyuki, Migita, Shinji, Hattori, Junichi, Fukuda, Koichi, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.04.2017)
Published in Japanese Journal of Applied Physics (01.04.2017)
Get full text
Journal Article
Fabrication and Demonstration of 3-nm-Channel-Length Junctionless Field-Effect Transistors on Silicon-on-Insulator Substrates Using Anisotropic Wet Etching and Lateral Diffusion of Dopants
Migita, Shinji, Morita, Yukinori, Masahara, Meishoku, Ota, Hiroyuki
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
Get full text
Journal Article
Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects
Ota, Hiroyuki, Hattori, Junichi, Asai, Hidehiro, Ikegami, Tsutomu, Fukuda, Koichi, Migita, Shinji, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
Get full text
Journal Article
Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation
Matsukawa, Takashi, Liu, Yongxun, Mori, Takahiro, Morita, Yukinori, Otsuka, Shintaro, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku
Published in Solid-state electronics (01.06.2017)
Published in Solid-state electronics (01.06.2017)
Get full text
Journal Article
One-dimensional array of gold nanoparticles fabricated using biotemplate and its application to fine FET
Ban, Takahiko, Uenuma, Mutsunori, Migita, Shinji, Okamoto, Naofumi, Ishikawa, Yasuaki, Uraoka, Yukiharu, Yamashita, Ichiro, Yamamoto, Shin-ichi
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Effect of hot implantation on ON-current enhancement utilizing isoelectronic trap in Si-based tunnel field-effect transistors
Mori, Takahiro, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Fukuda, Koichi, Miyata, Noriyuki, Yasuda, Tetsuji, Masahara, Meishoku, Ota, Hiroyuki
Published in Applied physics express (01.03.2015)
Published in Applied physics express (01.03.2015)
Get full text
Journal Article