(111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High- k MISFETs
Mise, N., Migita, S., Watanabe, Y., Satake, H., Nabatame, T., Toriumi, A.
Published in IEEE transactions on electron devices (01.05.2008)
Published in IEEE transactions on electron devices (01.05.2008)
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Journal Article
Band-to-band tunneling current enhancement utilizing isoelectronic trap and its application to TFETs
Mori, Takahiro, Morita, Yukinori, Miyata, Noriyuki, Migita, Shinji, Fukuda, Koichi, Masahara, Meishoku, Yasuda, Tetsuji, Ota, Hiroyuki
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
Comparative Study of Charge Trapping Type SOI-FinFET Flash Memories with Different Blocking Layer Materials
Liu, Yongxun, Nabatame, Toshihide, Matsukawa, Takashi, Endo, Kazuhiko, O'uchi, Shinichi, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Chikyow, Toyohiro, Masahara, Meishoku
Published in Journal of low power electronics and applications (20.06.2014)
Published in Journal of low power electronics and applications (20.06.2014)
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Journal Article
Effect of Ge Metal--Insulator--Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge
Taoka, Noriyuki, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Takagi, Shinichi
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs
Endo, Kazuhiko, Migita, Shinji, Ishikawa, Yuki, Matsukawa, Takashi, O'uchi, Shin-ichi, Tsukada, Junji, Mizubayashi, Wataru, Morita, Yukinori, Ota, Hiroyuki, Yamauchi, Hitomi, Masahara, Meishoku
Published in Journal of low power electronics and applications (23.05.2014)
Published in Journal of low power electronics and applications (23.05.2014)
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Journal Article
Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Kamei, Takahiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Journal Article
Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Kamei, Takahiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masahara, Meishoku
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Journal Article
Structural Metastability and Size Scalability of Phase-Controlled HfO2 Formed through Cap-PDA
Migita, Shinji, Watanabe, Yukimune, Ota, Hiroyuki, Nabatame, Toshihide, Toriumi, Akira
Published in ECS transactions (15.05.2009)
Published in ECS transactions (15.05.2009)
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Journal Article
Development of ferroelectricity with crystallographic phase transformation in Hf0.5Zr0.5O2 thin films upon initial stimulation of an electric field exceeding the coercive field
Morita, Yukinori, Onaya, Takashi, Asanuma, Shutaro, Ota, Hiroyuki, Migita, Shinji
Published in Japanese Journal of Applied Physics (01.04.2024)
Published in Japanese Journal of Applied Physics (01.04.2024)
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Journal Article
Development of ferroelectricity with crystallographic phase transformation in Hf 0.5 Zr 0.5 O 2 thin films upon initial stimulation of an electric field exceeding the coercive field
Morita, Yukinori, Onaya, Takashi, Asanuma, Shutaro, Ota, Hiroyuki, Migita, Shinji
Published in Japanese Journal of Applied Physics (01.04.2024)
Published in Japanese Journal of Applied Physics (01.04.2024)
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Journal Article
Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration
Ota, Hiroyuki, Ikegami, Tsutomu, Hattori, Junichi, Fukuda, Koichi, Migita, Shinji, Toriumi, Akira
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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Conference Proceeding
Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal–insulator–semiconductor gate stack structures using Hf 0.5 Zr 0.5 O 2 films
Migita, Shinji, Ota, Hiroyuki, Toriumi, Akira
Published in Japanese Journal of Applied Physics (01.11.2019)
Published in Japanese Journal of Applied Physics (01.11.2019)
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Journal Article
Accelerated ferroelectric phase transformation in HfO 2 /ZrO 2 nanolaminates
Migita, Shinji, Ota, Hiroyuki, Asanuma, Shutaro, Morita, Yukinori, Toriumi, Akira
Published in Applied physics express (01.05.2021)
Published in Applied physics express (01.05.2021)
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Journal Article
Perspective of negative capacitance FinFETs investigated by transient TCAD simulation
Ota, Hiroyuki, Fukuda, Koichi, Ikegami, Tsutomu, Hattori, Junichi, Asai, Hidehiro, Migita, Shinji, Toriumi, Akira
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding