Tuning of Schottky barrier height using oxygen-inserted (OI) layers and fluorine implantation
Zhang, Xi, Takeuchi, Hideki, Connelly, Daniel, Hytha, Marek, Mears, Robert J., Rubin, Leonard M., King Liu, Tsu-Jae
Published in AIP advances (01.06.2020)
Published in AIP advances (01.06.2020)
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Journal Article
Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel
Takeuchi, Hideki, Choutov, Dmitri, Agrawal, Nidhi, Datta, Suman, Mears, Robert J., Stephenson, Robert J., Hytha, Marek, Connelly, Daniel, Fastenko, Pavel, Burton, Richard, Cody, Nyles W., Weeks, Doran
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Analysis of 7/8-nm Bulk-Si FinFET Technologies for 6T-SRAM Scaling
Xi Zhang, Connelly, Daniel, Peng Zheng, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu
Published in IEEE transactions on electron devices (01.04.2016)
Published in IEEE transactions on electron devices (01.04.2016)
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Journal Article
Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology
Nuo Xu, Takeuchi, Hideki, Damrongplasit, Nattapol, Stephenson, Robert J., Xiangyang Huang, Cody, Nyles W., Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu
Published in IEEE transactions on electron devices (01.09.2014)
Published in IEEE transactions on electron devices (01.09.2014)
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Journal Article
Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield
Damrongplasit, Nattapol, Nuo Xu, Takeuchi, Hideki, Stephenson, Robert J., Cody, Nyles W., Yiptong, Augustin, Xiangyang Huang, Hytha, Marek, Mears, Robert J., Tsu-Jae King Liu
Published in IEEE transactions on electron devices (01.05.2013)
Published in IEEE transactions on electron devices (01.05.2013)
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Journal Article
Remote Control of Doping Profile, Silicon Interface, and Gate Dielectric Reliability via Oxygen Insertion into Silicon Channel
Takeuchi, Hideki, Mears, Robert J., Hytha, Marek, Connelly, Daniel J., Nicollian, Paul E., Wong, Hiu-Yung
Published in 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (28.11.2022)
Published in 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) (28.11.2022)
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Conference Proceeding
SSROI (super-steep retrograde on insulator) substrates for RF switch and LNA device performance enhancement
Takeuchi, Hideki, Stephenson, Robert J., Vine, Bobby, Weeks, K. Doran, Cody, Nyles W., Li, Shuyi, Connelly, Daniel, Mears, Robert J., Pfeiffer, Gerd, Aulnette, Cecile, David, Carole, Wong, Hiu-Yung
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
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Conference Proceeding
Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers
Fujii, Shuntaro, Takeuchi, Hideki, Morita, Soichi, Yagi, Tatsushi, Hamada, Shohei, Sakamoto, Toshiro, Kawaguchi, Shinji, Ishigami, Naoki, Okamoto, Atsushi, Ikeda, Shuji, Wong, Hiu-Yung, Mears, Robert J., Miyazaki, Tsutomu
Published in 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (20.07.2020)
Published in 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (20.07.2020)
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Conference Proceeding
Applications of Oxygen Inserted Silicon Devices in Power and RF: (invited)
Mears, Robert J, Takeuchi, Hideki, Chen, Yi-Ann, Burton, Richard, Li, Shuyi, Stephenson, Robert J., Hytha, Marek, Cody, Nyles W., Weeks, K. Doran, Choutov, Dmitri, Connelly, Daniel, Wong, Hiu-Yung
Published in 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (01.04.2020)
Published in 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (01.04.2020)
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Conference Proceeding
Effects of oxygen-inserted layers and oxide capping layer on dopant activation for the formation of ultrashallow p-n junctions in silicon
Zhang, Xi, Connelly, Daniel, Takeuchi, Hideki, Hytha, Marek, Mears, Robert J., Rubin, Leonard M., Liu, Tsu-Jae King
Published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics (01.11.2018)
Published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics (01.11.2018)
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Journal Article
Oxygen-inserted SegFET: A candidate for 10-nm node system-on-chip applications
Nuo Xu, Takeuchi, Hideki, Damrongplasit, Nattapol, Stephenson, Robert J., Hytha, Marek, Cody, Nyles, Mears, Robert J., Liu, Tsu-Jae King
Published in 2014 Silicon Nanoelectronics Workshop (SNW) (01.06.2014)
Published in 2014 Silicon Nanoelectronics Workshop (SNW) (01.06.2014)
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Conference Proceeding