Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers
Chindalore, G., Hareland, S.A., Jallepalli, S.A., Tasch, A.F., Maziar, C.M., Chia, V.K.F., Smith, S.
Published in IEEE electron device letters (01.05.1997)
Published in IEEE electron device letters (01.05.1997)
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Journal Article
A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's
Hasnat, K., Yeap, C.-F., Jallepalli, S., Shih, W.-K., Hareland, S.A., Agostinelli, V.M., Tasch, A.F., Maziar, C.M.
Published in IEEE transactions on electron devices (01.08.1996)
Published in IEEE transactions on electron devices (01.08.1996)
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Journal Article
An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si
Chindalore, G., Shih, W.-K., Jallepalli, S., Hareland, S.A., Tasch, A.F., Maziar, C.M.
Published in IEEE transactions on electron devices (01.03.2000)
Published in IEEE transactions on electron devices (01.03.2000)
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Journal Article
A physically-based model for quantization effects in hole inversion layers
Hareland, S.A., Jallepalli, S., Wei-Kai Shih, Haihong Wang, Chindalore, G.L., Tasch, A.F., Maziar, C.M.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
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Journal Article
Design considerations for high performance avalanche photodiode multiplication layers
Chandramouli, V., Maziar, C.M., Campbell, J.C.
Published in IEEE transactions on electron devices (01.05.1994)
Published in IEEE transactions on electron devices (01.05.1994)
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Journal Article
Effects of multiband electron-hole scattering and hole wave-function symmetry on minority-electron transport in GaAs
SADRA, K, MAZIAR, C. M, STREETMAN, B. G, TANG, D. S
Published in Journal of applied physics (15.11.1989)
Published in Journal of applied physics (15.11.1989)
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Journal Article
MOSFET drain engineering analysis for deep-submicrometer dimensions: a new structural approach
Shin, H., Tasch, A.F., Bordelon, T.J., Maziar, C.M.
Published in IEEE transactions on electron devices (01.08.1992)
Published in IEEE transactions on electron devices (01.08.1992)
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Journal Article
An evaluation of energy transport models for silicon device simulation
Bordelon, T.J., Wang, X.-L., Maziar, C.M., Tasch, A.F.
Published in Solid-state electronics (01.06.1991)
Published in Solid-state electronics (01.06.1991)
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Journal Article
Non-zone-folded transition-energy calculations for quantum-confined Stark effect in Si1-xGex/Si quantum wells
CHOWDHURY, A. A, JUNG, K. H, KWONG, D. L, MAZIAR, C. M
Published in Journal of applied physics (01.10.1991)
Published in Journal of applied physics (01.10.1991)
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Journal Article
A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors
Maziar, C.M., Klausmeier-Brown, M.E., Lundstrom, M.S.
Published in IEEE electron device letters (01.08.1986)
Published in IEEE electron device letters (01.08.1986)
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Journal Article
A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs
Hareland, S.A., Krishnamurthy, S., Jallepalli, S., Choh-Fei Yeap, Hasnat, K., Tasch, A.F., Maziar, C.M.
Published in IEEE transactions on electron devices (01.01.1996)
Published in IEEE transactions on electron devices (01.01.1996)
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Journal Article