Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy
REN, Y, MICOVIC, M, CAI, W. Z, MOHNEY, S, LORD, S. M, MILLER, D. L, MAYER, A. T. S
Published in Journal of electronic materials (01.07.1999)
Published in Journal of electronic materials (01.07.1999)
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