Growth and characterization of cubic SiC single-crystal films on Si
Powell, J. Anthony, Matus, L. G., Kuczmarski, Maria A.
Published in Journal of the Electrochemical Society (01.06.1987)
Published in Journal of the Electrochemical Society (01.06.1987)
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Journal Article
Thermal oxidation of SiC in N2O
DE MEO, R. C, WANG, T. K, CHOW, T. P, BROWN, D. M, MATUS, L. G
Published in Journal of the Electrochemical Society (01.11.1994)
Published in Journal of the Electrochemical Society (01.11.1994)
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Journal Article
High frequency capacitance-voltage characteristics of thermally grown SiO2 films on beta-SiC
Tang, S. M., Berry, W. B., Kwor, R., Zeller, M. V., Matus, L. G.
Published in Journal of the Electrochemical Society (01.01.1990)
Published in Journal of the Electrochemical Society (01.01.1990)
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Journal Article
Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition
Neudeck, P.G., Larkin, D.J., Starr, J.E., Powell, J.A., Salupo, C.S., Matus, L.G.
Published in IEEE electron device letters (01.03.1993)
Published in IEEE electron device letters (01.03.1993)
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Journal Article
Deep-level dominated electrical characteristics of Au contacts on beta-SiC
Das, K., Kong, H. S., Petit, J. B., Bumgarner, J. W., Davis, R. F., Matus, L. G.
Published in Journal of the Electrochemical Society (01.05.1990)
Published in Journal of the Electrochemical Society (01.05.1990)
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Journal Article
Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films
Mehregany, M., Lijun Tong, Matus, L.G., Larkin, D.J.
Published in IEEE transactions on electron devices (01.01.1997)
Published in IEEE transactions on electron devices (01.01.1997)
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Journal Article
Thermal Oxidation of SiC in N 2 O
De Meo, R. C., Wang, T. K., Chow, T. P., Brown, D. M., Matus, L. G.
Published in Journal of the Electrochemical Society (01.11.1994)
Published in Journal of the Electrochemical Society (01.11.1994)
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Journal Article
High voltage 6H-SiC rectifiers: prospects and progress
Neudeck, P.G., Larkin, D.J., Powell, J.A., Matus, L.G.
Published in IEEE transactions on electron devices (01.11.1993)
Published in IEEE transactions on electron devices (01.11.1993)
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Journal Article
Four-fold improvement of 3C-SiC PN junction diode blocking voltage obtained through improved CVD epitaxy on low-tilt-angle 6H-SiC wafers
Neudeck, Larkin, Starr, Powell, Salupo, Matus
Published in 1992 International Technical Digest on Electron Devices Meeting (1992)
Published in 1992 International Technical Digest on Electron Devices Meeting (1992)
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