Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model
Higashi, Yusuke, Momo, Nobuyuki, Sasaki, Hiroki, Momose, Hisayo Sasaki, Ohguro, Tatsuya, Mitani, Yuichiro, Ishihara, Takamitsu, Matsuzawa, Kazuya
Published in IEEE transactions on electron devices (01.12.2014)
Published in IEEE transactions on electron devices (01.12.2014)
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Journal Article
Analytical Single-Electron Transistor (SET) Model for Design and Analysis of Realistic SET Circuits
Ken Uchida, Ken Uchida, Kazuya Matsuzawa, Kazuya Matsuzawa, Junji Koga, Junji Koga, Ryuji Ohba, Ryuji Ohba, Shin-ichi Takagi, Shin-ichi Takagi, Akira Toriumi, Akira Toriumi
Published in Japanese Journal of Applied Physics (01.04.2000)
Published in Japanese Journal of Applied Physics (01.04.2000)
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Journal Article
Accurate Method of Measuring Specific Contact Resistivity of Interface between Silicide and Silicon and Its Application
Ohuchi, Kazuya, Lavoie, Christian, Yang, Bin, Kondo, Masaki, Matsuzawa, Kazuya, Solomon, Paul M.
Published in Japanese Journal of Applied Physics (01.10.2012)
Published in Japanese Journal of Applied Physics (01.10.2012)
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Journal Article
Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
Ma, Chenyue, Mattausch, Hans Jürgen, Miyake, Masataka, Matsuzawa, Kazuya, Iizuka, Takahiro, Yamaguchi, Seiichiro, Hoshida, Teruhiko, Kinoshita, Akinari, Arakawa, Takahiko, He, Jin, Miura-Mattausch, Mitiko
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
Ma, Chenyue, Mattausch, Hans Jürgen, Miyake, Masataka, Matsuzawa, Kazuya, Iizuka, Takahiro, Yamaguchi, Seiichiro, Hoshida, Teruhiko, Kinoshita, Akinari, Arakawa, Takahiko, He, Jin, Miura-Mattausch, Mitiko
Published in Japanese Journal of Applied Physics (01.02.2012)
Published in Japanese Journal of Applied Physics (01.02.2012)
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Journal Article
Effect of Carrier Transit Delay on Complementary Metal--Oxide--Semiconductor Switching Performance
Hori, Daisuke, Miyake, Masataka, Sadachika, Norio, Mattausch, Hans-Juergen, Miura-Mattausch, Mitiko, Iizuka, Takahiro, Hoshida, Teruhiko, Matsuzawa, Kazuya, Sahara, Yasuyuki, Tsukada, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Ishihara, Takamitsu, Matsuzawa, Kazuya, Takayanagi, Mariko, Takagi, Shin-ichi
Published in Japanese Journal of Applied Physics (01.04.2002)
Published in Japanese Journal of Applied Physics (01.04.2002)
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Journal Article
Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime
Tetsuo Hatakeyama, Tetsuo Hatakeyama, Kazuya Matsuzawa, Kazuya Matsuzawa, Shin-ichi Takagi, Shin-ichi Takagi
Published in Japanese Journal of Applied Physics (01.04.2001)
Published in Japanese Journal of Applied Physics (01.04.2001)
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Journal Article
SWITCHING ELEMENT AND STORAGE DEVICE
ITAI SHOGO, NAKAYAMA MASAHIKO, MATSUZAWA KAZUYA, SUGIYAMA HIDEYUKI, KANAYA HIROYUKI
Year of Publication 27.06.2023
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Year of Publication 27.06.2023
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