Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Uemoto, Y., Hikita, M., Ueno, H., Matsuo, H., Ishida, H., Yanagihara, M., Ueda, T., Tanaka, T., Ueda, D.
Published in IEEE transactions on electron devices (01.12.2007)
Published in IEEE transactions on electron devices (01.12.2007)
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Journal Article
Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors
Okita, Hideyuki, Hikita, Masahiro, Nishio, Akihiko, Sato, Takahiro, Matsunaga, Keiichi, Matsuo, Hisayoshi, Tsuda, Michinobu, Mannoh, Masaya, Kaneko, Saichiro, Kuroda, Masayuki, Yanagihara, Manabu, Ikoshi, Ayanori, Morita, Tatsuo, Tanaka, Kenichiro, Uemoto, Yasuhiro
Published in IEEE transactions on electron devices (01.03.2017)
Published in IEEE transactions on electron devices (01.03.2017)
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Journal Article
Through recessed and regrowth gate technology for realizing process stability of GaN-GITs
Okita, Hideyuki, Hikita, Masahiro, Nishio, Akihiko, Sato, Takahiro, Matsunaga, Keiichi, Matsuo, Hisayoshi, Mannoh, Masaya, Uemoto, Yasuhiro
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor
Ishida, H., Shibata, D., Yanagihara, M., Uemoto, Y., Matsuo, H., Ueda, T., Tanaka, T., Ueda, D.
Published in IEEE electron device letters (01.10.2008)
Published in IEEE electron device letters (01.10.2008)
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Journal Article
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
UEMOTO, YASUHIRO, HIKITA, MASAHIRO, OKITA, HIDEYUKI, MATSUO, HISAYOSHI
Year of Publication 14.01.2016
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Year of Publication 14.01.2016
Patent
MOUNTED TRANSISTOR AND METHOD OF PRODUCING SAME
TANAKA, KENICHIRO, UEDA, TETSUZO, HIKITA, MASAHIRO, MATSUO, HISAYOSHI
Year of Publication 02.09.2010
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Year of Publication 02.09.2010
Patent
Possibility of High Deposition Rate in SmBa 2 Cu 3 O y Films Prepared Using the Vapor–Liquid–Solid Growth Mode
Ichino, Yusuke, Matsuo, Hisayoshi, Yoshida, Yutaka, Takai, Yoshiaki, Matsumoto, Kaname, Mukaida, Masashi, Ichinose, Ataru, Horii, Shigeru
Published in Japanese Journal of Applied Physics (01.02.2006)
Published in Japanese Journal of Applied Physics (01.02.2006)
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Journal Article
8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation
Uemoto, Y., Shibata, D., Yanagihara, M., Ishida, H., Matsuo, H., Nagai, S., Batta, N., Ming Li, Ueda, T., Tanaka, T., Ueda, D.
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
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Conference Proceeding