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"MATSUNO RAIDEN"
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소스 층들과 드레인 층들의 교번하는 스택 및 수직 게이트 전극들을 포함하는 3차원 메모리 디바이스
by
MATSUNO RAIDEN
,
CHOWDHURY MURSHED
,
ALSMEIER JOHANN
,
KAI JAMES
Year of Publication
30.06.2021
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Three-dimensional memory device including through-memory-level via structures and methods of making the same
by
Iwai, Takaaki
,
Kanazawa, Junpei
,
Matsuno
,
Raiden
,
Otoi, Hisakazu
,
Matsuoka, Hironori
Year of Publication
29.11.2022
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THREE-DIMENSIONAL MEMORY DEVICE INCLUDING THROUGH-MEMORY-LEVEL VIA STRUCTURES AND METHODS OF MAKING THE SAME
by
IWAI, Takaaki
,
KANAZAWA, Junpei
,
OTOI, Hisakazu
,
MATSUNO
,
Raiden
,
MATSUOKA, Hironori
Year of Publication
09.12.2021
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Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes
by
Chowdhury, Murshed
,
Alsmeier, Johann
,
Matsuno
,
Raiden
,
Kai, James
Year of Publication
16.03.2021
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THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALTERNATING STACK OF SOURCE LAYERS AND DRAIN LAYERS AND VERTICAL GATE ELECTRODES
by
KAI, James
,
ALSMEIER, Johann
,
CHOWDHURY, Murshed
,
MATSUNO
,
Raiden
Year of Publication
18.02.2021
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THREE-DIMENSIONAL MEMORY DEVICE CONTAINING ALTERNATING STACK OF SOURCE LAYERS AND DRAIN LAYERS AND VERTICAL GATE ELECTRODES
by
KAI, James
,
ALSMEIER, Johann
,
CHOWDHURY, Murshed
,
MATSUNO
,
Raiden
Year of Publication
18.02.2021
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Three-dimensional memory device comprising alternating stack of source and drain layers and vertical gate electrode
by
MATSUNO RAIDEN
,
CHOWDHURY MURSHED
,
ALSMEIER JOHANN
,
KAI JAMES
Year of Publication
17.08.2021
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