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A channel-erasing 1.8-V-only 32-Mb NOR flash EEPROM with a bitline direct sensing scheme
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Published in IEEE journal of solid-state circuits (01.11.2000)
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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING ELEMENT ISOLATING REGION OF TRENCH TYPE
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Year of Publication 27.08.2015
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Nonvolatile semiconductor memory device having element isolating region of trench type
MATSUI MICHIHARU, KAMIGAICHI TAKESHI, MORI SEIICHI, TAKEUCHI YUJI, SHIROTA RIICHIRO
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Year of Publication 16.06.2015
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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING ELEMENT ISOLATING REGION OF TRENCH TYPE
MATSUI MICHIHARU, KAMIGAICHI TAKESHI, MORI SEIICHI, TAKEUCHI YUJI, SHIROTA RIICHIRO
Year of Publication 17.10.2013
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Year of Publication 17.10.2013
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Nonvolatile semiconductor memory device having element isolating region of trench type
MATSUI MICHIHARU, KAMIGAICHI TAKESHI, MORI SEIICHI, TAKEUCHI YUJI, SHIROTA RIICHIRO
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Year of Publication 16.04.2013
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Nonvolatile semiconductor memory device having element isolating region of trench type
MATSUI MICHIHARU, KAMIGAICHI TAKESHI, MORI SEIICHI, TAKEUCHI YUJI, SHIROTA RIICHIRO
Year of Publication 26.03.2013
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Year of Publication 26.03.2013
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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE HAVING ELEMENT ISOLATING REGION OF TRENCH TYPE
MATSUI MICHIHARU, KAMIGAICHI TAKESHI, MORI SEIICHI, TAKEUCHI YUJI, SHIROTA RIICHIRO
Year of Publication 05.07.2012
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Year of Publication 05.07.2012
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