Search Results - "MATLOUBIAN, Mishel" :: K.UTB vyhledávací portál

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전계 효과 트랜지스터(FET) 전류 누설을 감소시키기 위해 에지 트랜지스터 전류 누설 억제를 채용하는 FET들

by PAUL ABHIJEET, MATLOUBIAN MISHEL
Year of Publication 05.01.2023

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전기적 가드 링 및 크랙 스톱으로서 구성된 주변 구조를 포함하는 집적 디바이스

by PAUL ABHIJEET, MATLOUBIAN MISHEL
Year of Publication 05.01.2023

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SECURE ANTI-FUSE ONE TIME PROGRAMMABLE BIT CELL DESIGN

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 26.09.2024

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SECURE ANTI-FUSE ONE TIME PROGRAMMABLE BIT CELL DESIGN

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 26.09.2024

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MOISTURE SENSOR HAVING INTEGRATED HEATING ELEMENT

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 26.09.2024

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DIELECTRIC FILM BASED ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 26.09.2024

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ONE-TIME PROGRAMMABLE (OTP) MEMORY CELL

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 26.09.2024

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Field-effect transistors (FETs) employing edge transistor current leakage suppression to reduce FET current leakage

by Matloubian, Mishel, Paul, Abhijeet
Year of Publication 02.04.2024

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Anomalous subthreshold current-Voltage characteristics of n-channel SOI MOSFET's

by Fossum, J.G., Sundaresan, R., Matloubian, M.
Published in IEEE electron device letters (01.11.1987)

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Integrated device comprising periphery structure configured as an electrical guard ring and a crack stop

by Matloubian, Mishel, Paul, Abhijeet
Year of Publication 20.06.2023

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FIELD-EFFECT TRANSISTORS (FETS) EMPLOYING EDGE TRANSISTOR CURRENT LEAKAGE SUPPRESSION TO REDUCE FET CURRENT LEAKAGE

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 01.03.2023

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INTEGRATED DEVICE COMPRISING PERIPHERY STRUCTURE CONFIGURED AS AN ELECTRICAL GUARD RING AND A CRACK STOP

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 22.02.2023

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Modeling of the subthreshold characteristics of SOI MOSFETs with floating body

by Matloubian, M., Chen, C.-E.D., Mao, B.-Y., Sundaresan, R., Pollack, G.P.
Published in IEEE transactions on electron devices (01.09.1990)

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FIELD-EFFECT TRANSISTORS (FETs) EMPLOYING EDGE TRANSISTOR CURRENT LEAKAGE SUPPRESSION TO REDUCE FET CURRENT LEAKAGE

by Matloubian, Mishel, Paul, Abhijeet
Year of Publication 28.10.2021

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INTEGRATED DEVICE COMPRISING PERIPHERY STRUCTURE CONFIGURED AS AN ELECTRICAL GUARD RING AND A CRACK STOP

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 21.10.2021

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INTEGRATED DEVICE COMPRISING PERIPHERY STRUCTURE CONFIGURED AS AN ELECTRICAL GUARD RING AND A CRACK STOP

by PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 21.10.2021

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Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements

by Chih-Hung Chen, Deen, M.J., Yuhua Cheng, Matloubian, M.
Published in IEEE transactions on electron devices (01.12.2001)

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MONOLITHIC-INTEGRATED BULK ACOUSTIC WAVE (BAW) RESONATOR

by KIM, Jonghae, PAUL, Abhijeet, MATLOUBIAN, Mishel
Year of Publication 26.09.2024

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On the high-frequency characteristics of substrate resistance in RF MOSFETs

by Yuhua Cheng, Matloubian, M.
Published in IEEE electron device letters (01.12.2000)

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High-frequency small signal AC and noise modeling of MOSFETs for RF IC design

by Yuhua Cheng, Chih-Hung Chen, Matloubian, M., Deen, M.J.
Published in IEEE transactions on electron devices (01.03.2002)

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