Characteristics of β‐SIC films grown from an SiHC1 3 ‐C 3 H 8 ‐H 2 system
Furumura, Yuji, Doki, Masahiko, Mieno, Fumitake, Maeda, Mamoru
Published in Electronics & communications in Japan. Part 2, Electronics (01.01.1987)
Published in Electronics & communications in Japan. Part 2, Electronics (01.01.1987)
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Journal Article
Method of making a semiconductor device having planarized insulating layer
OHIRA; KOICHIRO, KARAKAWA; KATSUYUKI, DOKI; MASAHIKO, IZUMI; KAZUTOSHI
Year of Publication 02.11.1999
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Year of Publication 02.11.1999
Patent