0.1-μm T-gate Al-free InP/InGaAs/InP pHEMTs for W-band applications using a nitrogen carrier for LP-MOCVD growth
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Published in IEEE electron device letters (01.04.1997)
Published in IEEE electron device letters (01.04.1997)
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Year of Publication 29.05.2012
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Year of Publication 29.05.2012
Patent
Drive current adjustment for transistors by local gate engineering
Horstmann, Manfred, Press, Patrick, Wieczorek, Karsten, Ruttloff, Kerstin
Year of Publication 29.05.2012
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Year of Publication 29.05.2012
Patent