Search Results - "MANFRED HORSTMANN" :: K.UTB vyhledávací portál

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METHOD FOR REDUCING DEFECTS OF GATE OF CMOS DEVICES DURING CLEANING PROCESSES BY MODIFYING A PARASITIC PN JUNCTION

by RUTTLOFF KERSTIN, JAVORKA PETER, HORSTMANN MANFRED, WIECZOREK KARSTEN
Year of Publication 05.11.2009

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METHOD FOR REDUCING DEFECTS OF GATE OF CMOS DEVICES DURING CLEANING PROCESSES BY MODIFYING A PARASITIC PN JUNCTION

by HORSTMANN, MANFRED, RUTTLOFF, KERSTIN, WIECZOREK, KARSTEN, JAVORKA, PETER
Year of Publication 05.11.2009

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Technique for evaluating local electrical characteristics in semiconductor devices

by FRANK WIRBELEIT, GERT BURBACH, MANFRED HORSTMANN, KARSTEN WIECZOREK
Year of Publication 04.11.2009

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Ein Verfahren zur Herstellung eines SOI-Feldeffekttransistorelements mit einem Rekombinationsgebiet

by HORSTMANN, MANFRED, WIECZOREK, KARSTEN, KRUEGER, CHRISTIAN
Year of Publication 13.02.2014

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Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device

by Stephan, Rolf, Horstmann, Manfred, Wieczorek, Karsten
Year of Publication 03.10.2006

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Semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device

by HORSTMANN MANFRED, WIECZOREK KARSTEN, STEPHAN ROLF
Year of Publication 03.10.2006

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A semiconductor device having different metal-semiconductor portions formed in a semiconductor region and a method for fabricating the semiconductor device

by STEPHAN, ROLF, HORSTMANN, MANFRED, WIECZOREK, KARSTEN
Year of Publication 01.10.2006

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Method for forming an improved metal silicide portion in a silicon-containing conductive region in an integrated circuit

by HORSTMANN, MANFRED, WIECZOREK, KARSTEN, KAHLERT, VOLKER
Year of Publication 01.10.2006

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ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELECTRIC MATERIAL IN A CONTACT LEVEL OF CLOSELY SPACED TRANSISTORS

by HUEBLER PETER, RUTTLOFF KERSTIN, WIECZOREK KARSTEN, HORSTMANN MANFRED
Year of Publication 03.09.2009

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AN ETCH STOP LAYER OF REDUCED THICKNESS FOR PATTERNING A DIELECTRIC MATERIAL IN A CONTACT LEVEL OF CLOSELY SPACED TRANSISTORS

by HUEBLER, PETER, HORSTMANN, MANFRED, RUTTLOFF, KERSTIN, WIECZOREK, KARSTEN
Year of Publication 03.09.2009

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Different embedded strain layers in PMOS and NMOS transistors and a method of forming the same

by HOENTSCHEL JAN, WEI ANDY, HORSTMANN MANFRED, KAMMLER THORSTEN
Year of Publication 25.08.2009

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Different embedded strain layers in PMOS and NMOS transistors and a method of forming the same

by Hoentschel, Jan, Wei, Andy, Horstmann, Manfred, Kammler, Thorsten
Year of Publication 25.08.2009

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Semiconductor device comprising isolation trenches inducing different types of strain

by SCHWAN CHRISTOPH, WIRBELEIT FRANK, BLOOMQUIST JOE, JAVORKA PETER, HORSTMANN MANFRED, BEYER SVEN, FORSBERG MARKUS, ROMERO KARLA
Year of Publication 20.03.2012

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Semiconductor device comprising isolation trenches inducing different types of strain

by Schwan, Christoph, Bloomquist, Joe, Javorka, Peter, Horstmann, Manfred, Beyer, Sven, Forsberg, Markus, Wirbeleit, Frank, Romero, Karla
Year of Publication 20.03.2012

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