Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
Manabe, Kenzo, Hase, Takashi, Tatsumi, Toru, Watanabe, Heiji, Yasutake, Kiyoshi
Published in Japanese Journal of Applied Physics (01.12.2006)
Published in Japanese Journal of Applied Physics (01.12.2006)
Get full text
Journal Article
Fully Silicided NiSi Gate Electrodes on HfSiON Gate Dielectrics for Low-Power Applications
Manabe, Kenzo, Takahashi, Kensuke, Ikarashi, Taeko, Morioka, Ayuka, Watanabe, Heiji, Yoshihara, Takuya, Tatsumi, Toru
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
Get full text
Journal Article
Formation of Nickel Self-Aligned Silicide by Using Cyclic Deposition Method
Terashima, Koichi, Miura, Yoshinao, Ikarashi, Nobuyuki, Oshida, Makiko, Manabe, Kenzo, Yoshihara, Takuya, Tanaka, Masayasu, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
Get full text
Journal Article
MECHANISM OF LEAKAGE CURRENT REDUCTION BY ADDING WO3 TO CRYSTALLIZED Ta2O5
Manabe, K, Kobayashi, K, Fujieda, S, Tatsumi, T
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6B, pp. L625-L627. 2001 (01.01.2001)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 40, no. 6B, pp. L625-L627. 2001 (01.01.2001)
Get full text
Journal Article
Mechanism for Leakage Reduction by La Incorporation in a HfO2/SiO2/Si Gate Stack
MANABE, Kenzo, WATANABE, Koji, JAGANNATHAN, Hemanth, PARUCHURI, Vamsi K
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
Get full text
Journal Article
Mechanism for Leakage Reduction by La Incorporation in a \hbox\hbox\hbox Gate Stack
Manabe, K., Watanabe, K., Jagannathan, H., Paruchuri, V. K.
Published in IEEE electron device letters (01.03.2013)
Published in IEEE electron device letters (01.03.2013)
Get full text
Journal Article
Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
Manabe, Kenzo, Hase, Takashi, Tatsumi, Toru, Watanabe, Heiji, Yasutake, Kiyoshi
Published in Japanese Journal of Applied Physics (01.01.2007)
Published in Japanese Journal of Applied Physics (01.01.2007)
Get full text
Journal Article
Analysis of Electronic Structure of High-K Films using STEM-EELS
Ikarashi, Nobuyuki, Manabe, Kenzo, Takahashi, Kensuke, Saitoh, Motofumi
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
Get full text
Journal Article