Search Results - "MAJKUSIAK, Bogdan" :: K.UTB vyhledávací portál

Loading…

Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal-Oxide-Semiconductor Structures

by Wiśniewski, Piotr, Majkusiak, Bogdan
Published in Materials (08.04.2022)

Get full text

Journal Article

Loading…

Electron mobility and drain current in strained-Si MOSFET

by Walczak, Jakub, Majkusiak, Bogdan
Published in Journal of Telecommunications and Information Technology (01.06.2023)

Get full text

Journal Article

Loading…

Investigation of Electrical Properties of the Al/SiO2/n++-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

by Wiśniewski, Piotr, Jasiński, Jakub, Mazurak, Andrzej, Stonio, Bartłomiej, Majkusiak, Bogdan
Published in Materials (13.10.2021)

Get full text

Journal Article

Loading…

Modeling the Current-Voltage Characteristics of Ge₁₋ₓSnₓ Electron-Hole Bilayer TFET With Various Compositions

by Wisniewski, Piotr, Majkusiak, Bogdan
Published in IEEE transactions on electron devices (01.07.2020)

Get full text

Journal Article

Loading…

Investigation of the anomalous effect of the AC-signal frequency on flat-band voltage of Al/HfO2/SiO2/Si structures

by Mazurak, Andrzej, Majkusiak, Bogdan
Published in Solid-state electronics (01.09.2021)

Get full text

Journal Article

Loading…

Theoretical Study of Electron Mobility in Double-Gate Field Effect Transistors with Multilayer (strained-)Si/SiGe Channel

by Walczak, Jakub, Majkusiak, Bogdan
Published in Journal of semiconductor technology and science (30.09.2008)

Get full text

Journal Article

Loading…

Theoretical Study of Electron Mobility in Double-Gate Field Effect Transistors with Multilayer (strained-)Si/SiGe Channel

by Walczak, Jakub, Majkusiak, Bogdan
Published in Journal of semiconductor technology and science (2008)

Get full text

Journal Article

Loading…

Modeling the Tunnel Field-Effect Transistor Based on Different Tunneling Path Approaches

by Wisniewski, Piotr, Majkusiak, Bogdan
Published in IEEE transactions on electron devices (01.06.2018)

Get full text

Journal Article

Loading…

Insulating Films on Semiconductors 2013

by MAJKUSIAK, Bogdan, LUKASIAK, Lidia
Published in Microelectronic engineering (2013)

Get full text

Journal Article

Loading…

Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers

by Jakub Walczak, Bogdan Majkusiak
Published in Journal of Telecommunications and Information Technology (30.03.2004)

Get full text

Journal Article

Loading…

WITHDRAWN: Preface

by Majkusiak, Bogdan, Łukasiak, Lidia, Normand, Pascal
Published in Microelectronic engineering (2015)

Get full text

Journal Article

Loading…

Effect of nanocrystal geometric location on tunnel currents and small-signal admittance of MIS structures

by Mazurak, Andrzej, Jasiński, Jakub, Majkusiak, Bogdan
Published in Physica status solidi. C (01.12.2016)

Get full text

Journal Article

Loading…

Small-signal admittance model of multi-traps distributed over energy and space in the insulator of MIS tunnel structures

by Jasiński, Jakub, Mazurak, Andrzej, Mroczyński, Robert, Majkusiak, Bogdan
Published in Microelectronic engineering (01.11.2015)

Get full text

Journal Article

Loading…

Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure: Insulating Films on Semiconductors 2013

by JASIŃSKI, Jakub, MAZURAK, Andrzej, MAJKUSIAK, Bogdan
Published in Microelectronic engineering (2013)

Get full text

Journal Article

Loading…

Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics

by Tomasz Janik, Bogdan Majkusiak, Michał Korwin-Pawłowski
Published in Journal of Telecommunications and Information Technology (30.03.2001)

Get full text

Journal Article

Loading…

Modeling the Inelastic Scattering Effect on the Resonant Tunneling Current

by Majkusiak, Bogdan
Published in Journal of computational electronics (01.09.2007)

Get full text

Journal Article

Loading…

Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

by Jasiński, Jakub, Mazurak, Andrzej, Majkusiak, Bogdan
Published in Microelectronic engineering (01.09.2013)

Get full text

Journal Article

Loading…

A technical formula for determining the insulator capacitance in a MOS structure

by Majkusiak, Bogdan, Jakubowski, Andrezej
Published in Solid-state electronics (01.02.1992)

Get full text

Journal Article

Loading…

Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates

by Majkusiak, Bogdan
Published in Microelectronic engineering (01.04.2004)

Get full text

Journal Article Conference Proceeding

Loading…

Tunneling and Resonant Tunneling Effects in the Metal-Ultrathin Oxide-(n+)Silicon Structures

by Wisniewski, Piotr, Majkusiak, Bogdan, Stonio, Bartlomiej
Published in 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (01.09.2020)

Get full text

Conference Proceeding

Refine Results

Format

Subject Area

Topic

Language

Year of Publication

Database