Density functional theory calculations for estimation of gettering sites of C, H, intrinsic point defects and related complexes in Si wafers
Shirasawa, Sho, Sueoka, Koji, Yamaguchi, Tadashi, Maekawa, Kazuyoshi
Published in Materials science in semiconductor processing (15.03.2016)
Published in Materials science in semiconductor processing (15.03.2016)
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Analysis of Junction Leakage Current Failure of Nickel Silicide Abnormal Growth Using Advanced Transmission Electron Microscopy
Kudo, Shuichi, Hirose, Yukinori, Yamaguchi, Tadashi, Kashihara, Keiichiro, Maekawa, Kazuyoshi, Asai, Koyu, Murata, Naofumi, Katayama, Toshiharu, Asayama, Kyoichiro, Hattori, Nobuyoshi, Koyama, Toru, Nakamae, Koji
Published in IEEE transactions on semiconductor manufacturing (01.02.2014)
Published in IEEE transactions on semiconductor manufacturing (01.02.2014)
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Rutherford Backscattering Spectrometry Analysis of Self-Formed Ti-Rich Interface Layer Growth in Cu(Ti)/Low-k Samples
Kohama, Kazuyuki, Ito, Kazuhiro, Mori, Kenichi, Maekawa, Kazuyoshi, Shirai, Yasuharu, Murakami, Masanori
Published in Journal of electronic materials (01.09.2009)
Published in Journal of electronic materials (01.09.2009)
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Suppression of Stress-Induced Voiding by Controlling Microstructure of Cu Electroplated Films
Muranaka, Seiji, Omori, Kazuyuki, Mori, Kenichi, Maekawa, Kazuyoshi, Shibata, Ryuji, Suzumura, Naohito, Kudo, Shuichi, Fujisawa, Masahiko
Published in Japanese Journal of Applied Physics (01.05.2013)
Published in Japanese Journal of Applied Physics (01.05.2013)
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Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si + Ion-Implantation Technique
Yamaguchi, Tadashi, Kashihara, Keiichiro, Kudo, Shuichi, Okudaira, Tomonori, Tsutsumi, Toshiaki, Maekawa, Kazuyoshi, Asai, Koyu, Kojima, Masayuki
Published in Japanese Journal of Applied Physics (01.06.2009)
Published in Japanese Journal of Applied Physics (01.06.2009)
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Journal Article
Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28 nm Node and Beyond
Ohmori, Kazuyuki, Mori, Kenichi, Maekawa, Kazuyoshi, Kohama, Kazuyuki, Ito, Kazuhiro, Ohnishi, Takashi, Mizuno, Masao, Asai, Koyu, Murakami, Masanori, Miyatake, Hiroshi
Published in Japanese Journal of Applied Physics (01.05.2010)
Published in Japanese Journal of Applied Physics (01.05.2010)
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Journal Article
Effects of Pore Sealing on Self-Formation of Ti-Rich Barrier Layers in Cu(Ti)/Porous-Low-$k$ Samples
Kohama, Kazuyuki, Ito, Kazuhiro, Sonobayashi, Yutaka, Tanaka, Tomohisa, Mori, Kenichi, Maekawa, Kazuyoshi, Shirai, Yasuharu, Murakami, Masanori
Published in Japanese Journal of Applied Physics (01.04.2010)
Published in Japanese Journal of Applied Physics (01.04.2010)
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Journal Article
Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced \hbox^ Ion-Implantation Technique
Yamaguchi, T., Kashihara, K., Okudaira, T., Tsutsumi, T., Maekawa, K., Murata, N., Tsuchimoto, J., Asai, K., Yoneda, M.
Published in IEEE transactions on electron devices (01.02.2009)
Published in IEEE transactions on electron devices (01.02.2009)
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The effect of microstructures on the electrical properties of Cr–Si–C thin film resistors
Ito, Nozomi, Maekawa, Kazuyoshi, Kunimune, Yorinobu, Hasegawa, Eiji, Abe, Kenichiro, Shiraishi, Nobuhito, Takahashi, Yuji, Tonegawa, Takashi, Tsuchiya, Yasuaki, Inoue, Masao
Published in Japanese Journal of Applied Physics (01.08.2022)
Published in Japanese Journal of Applied Physics (01.08.2022)
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