High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications
Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro
Published in Thin solid films (01.01.2019)
Published in Thin solid films (01.01.2019)
Get full text
Journal Article
500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC
Van Cuong, Vuong, Sato, Tadashi, Miyazaki, Takamichi, Meguro, Tatsuya, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Kuroki, Shin-Ichiro
Published in Japanese Journal of Applied Physics (01.03.2022)
Published in Japanese Journal of Applied Physics (01.03.2022)
Get full text
Journal Article
Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
Maeda, Tomonori, Muraoka, Kosuke, Ishikawa, Seiji, Kuroki, Shin Ichiro, Sezaki, Hiroshi
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
Get full text
Journal Article
Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC
Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro
Published in Japanese Journal of Applied Physics (01.11.2019)
Published in Japanese Journal of Applied Physics (01.11.2019)
Get full text
Journal Article
Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC
Muraoka, Kosuke, Ishikawa, Seiji, Sezaki, Hiroshi, Tomonori, Maeda, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro
Published in Materials science in semiconductor processing (01.01.2021)
Published in Materials science in semiconductor processing (01.01.2021)
Get full text
Journal Article
CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC
Van Cuong, Vuong, Miyazaki, Takamichi, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro
Published in Japanese Journal of Applied Physics (29.04.2020)
Published in Japanese Journal of Applied Physics (29.04.2020)
Get full text
Journal Article
Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC
Van Cuong, Vuong, Yasuno, Satoshi, Koganezawa, Tomoyuki, Sezaki, Hiroshi, Maeda, Tomonori, Ishikawa, Seiji, Kuroki, Shin Ichiro
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
Get full text
Journal Article
Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors
Sezaki, Hiroshi, Kuroki, Shin Ichiro, Kobayakawa, Kiichi, Ishikawa, Seiji, Muraoka, Kosuke, Maeda, Tomonori
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
Get full text
Journal Article
Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs
Östling, Mikael, Kuroki, Shin Ichiro, Ohshima, Takeshi, Zetterling, Carl Mikael, Makino, Takahiro, Maeda, Tomonori, Ishii, Tomoyasu, Ishikawa, Seiji, Sezaki, Hiroshi
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
Get full text
Journal Article
Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics
Kurose, Tatsuya, Kuroki, Shin Ichiro, Ohshima, Takeshi, Ishikawa, Seiji, Makino, Takahiro, Sezaki, Hiroshi, Östling, Mikael, Zetterling, Carl Mikael, Maeda, Tomonori
Published in Materials Science Forum (05.06.2018)
Published in Materials Science Forum (05.06.2018)
Get full text
Journal Article
4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
Kuroki, Shin Ichiro, Ohshima, Takeshi, Ishikawa, Seiji, Makino, Takahiro, Sezaki, Hiroshi, Östling, Mikael, Zetterling, Carl Mikael, Inoue, Jun, Maeda, Tomonori
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
Get full text
Journal Article
4H-SiC pseudo-CMOS logic inverters for harsh environment electronics
Kuroki, S.-I, Kurose, T., Nagatsuma, H., Ishikawa, S., Maeda, T., Sezaki, H., Kikkawa, T., Makino, T., Ohshima, T., Östling, M., Zetterling, C.-M
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Get full text
Conference Proceeding
Journal Article
Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation
Kuroki, Shin Ichiro, Makino, Takahiro, Ohshima, Takeshi, Ishikawa, Seiji, Zetterling, Carl Mikael, Sezaki, Hiroshi, Kikkawa, Takamaro, Östling, Mikael, Nagatsuma, Hirofumi, De Silva, Wijemuni, Maeda, Tomonori
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices
De Silva, Milantha, Maeda, Tomonori, Ishikawa, Seiji, Sezaki, Hiroshi, Miyazaki, Takamichi, Kikkawa, Takamaro, Kuroki, Shin-Ichiro
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
Get full text
Journal Article