Ultra-Thin-Body P-MOSFET Featuring Silicon-Germanium Source/Drain Stressors With High Germanium Content Formed by Local Condensation
King-Jien Chui, Kah-Wee Ang, Anuj Madan, Anyan Du, Chih-Hang Tung, Balasubramanian, N., Samudra, G., Yee-Chia Yeo
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
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Conference Proceeding
VOLTAGE COMPENSATED SWITCH STACK
MADAN ANUJ, ALTUNKILIC FIKRET, BLIN GUILLAUME ALEXANDRE, FUH HANCHING
Year of Publication 13.06.2017
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Year of Publication 13.06.2017
Patent
Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN
Madan, A., McPartlin, M. J., Zhan-Feng Zhou, Huang, C-W P., Masse, C., Cressler, J. D.
Published in IEEE journal of solid-state circuits (01.11.2011)
Published in IEEE journal of solid-state circuits (01.11.2011)
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Journal Article
Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-Film SOI
Wilcox, Edward P, Phillips, Stanley D, Peng Cheng, Thrivikraman, Tushar, Madan, Anuj, Cressler, John D, Vizkelethy, G, Marshall, Paul W, Marshall, Cheryl, Babcock, Jeff A, Kruckmeyer, Kirby, Eddy, Robert, Cestra, Greg, Benyong Zhang
Published in IEEE transactions on nuclear science (01.12.2010)
Published in IEEE transactions on nuclear science (01.12.2010)
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Journal Article
Low-frequency noise in buried-channel SiGe n-MODFETs
Madan, Anuj, Cressler, John D., Koester, Steven J.
Published in Solid-state electronics (01.08.2009)
Published in Solid-state electronics (01.08.2009)
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Journal Article
Conference Proceeding
Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs
Arora, R, Simoen, E, En Xia Zhang, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Choi, B K, Mitard, J, Meuris, M, Claeys, C, Madan, A, Cressler, J D
Published in IEEE transactions on nuclear science (01.08.2010)
Published in IEEE transactions on nuclear science (01.08.2010)
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Journal Article
The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI
Madan, A., Verma, R., Arora, R., Wilcox, E.P., Cressler, J.D., Marshall, P.W., Schrimpf, R.D., Cheng, P.F., Del Castillo, L.Y., Qingqing Liang, Freeman, G.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Source/drain germanium condensation for p-channel strained ultra-thin body transistors
King-Jien Chui, Kah-Wee Ang, Anuj Madan, Huiqi Wang, Chih-Hang Tung, Lai-Yin Wong, Yihua Wang, Siew-Fong Choy, Balasubramanian, N., Ming Fu Li, Ganesh Samudra, Yee-Chia Yeo
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
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Conference Proceeding
DEVICES AND METHODS RELATED TO VOLTAGE COMPENSATED SWITCH STACK
BLIN, Guillaume Alexandre, MADAN, Anuj, ALTUNKILIC, Fikret, FUH, Hanching
Year of Publication 09.05.2024
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Year of Publication 09.05.2024
Patent
Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology
Madan, A., Phillips, S.D., Cressler, J.D., Marshall, P.W., Qingqing Liang, Freeman, G.
Published in IEEE transactions on nuclear science (01.08.2009)
Published in IEEE transactions on nuclear science (01.08.2009)
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Journal Article
A high-linearity inverse-mode SiGe BiCMOS RF switch
Madan, A, Cressler, J, Joseph, A
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
Published in 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) (01.10.2010)
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Conference Proceeding
Devices and methods related to voltage compensated switch stack
Altunkilic, Fikret, Fuh, Hanching, Blin, Guillaume Alexandre, Madan, Anuj
Year of Publication 07.11.2023
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Year of Publication 07.11.2023
Patent