Strained Si/SiGe MOS technology: Improving gate dielectric integrity
Olsen, S.H., Yan, L., Agaiby, R., Escobedo-Cousin, E., O’Neill, A.G., Hellström, P.-E., Östling, M., Lyutovich, K., Kasper, E., Claeys, C., Parker, E.H.C.
Published in Microelectronic engineering (01.03.2009)
Published in Microelectronic engineering (01.03.2009)
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Conference Proceeding
MBE growth of low-defect Si layers highly doped with Sb
Werner, J., Oehme, M., Kirfel, O., Lyutovich, K., Kasper, E.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Conference Proceeding
X-ray imaging and diffraction study of strain relaxation in MBE grown SiGe/Si layers
Burle, N., Escoubas, S., Kasper, E., Werner, J., Oehme, M., Lyutovich, K.
Published in Physica status solidi. C (01.01.2013)
Published in Physica status solidi. C (01.01.2013)
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Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy
Perova, T.S., Moore, R.A., Lyutovich, K., Oehme, M., Kasper, E.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Conference Proceeding
Reduced self-heating by strained silicon substrate engineering
O’Neill, A., Agaiby, R., Olsen, S., Yang, Y., Hellstrom, P.-E., Ostling, M., Oehme, M., Lyutovich, K., Kasper, E., Eneman, G., Verheyen, P., Loo, R., Claeys, C., Fiegna, C., Sangiorgi, E.
Published in Applied surface science (30.07.2008)
Published in Applied surface science (30.07.2008)
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Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures
Hofer, C., Teichert, C., Oehme, M., Werner, J., Lyutovich, K., Kasper, E.
Published in Applied surface science (15.10.2009)
Published in Applied surface science (15.10.2009)
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Ion-assisted MBE for misfit-dislocation templates serving ordered growth of SiGe islands
Lyutovich, K., Oehme, M., Werner, J., Bahouchi, B., Kasper, E., Hofer, C., Teichert, C.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Conference Proceeding
Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs
von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.
Published in Solid-state electronics (01.05.2007)
Published in Solid-state electronics (01.05.2007)
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Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)
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Highly-ordered SiGe-islands grown by dislocation patterning using ion-assisted MBE
Werner, J., Oehme, M., Lyutovich, K., Kasper, E., Hofer, C., Teichert, C.
Published in Surface science (01.07.2007)
Published in Surface science (01.07.2007)
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Conference Proceeding
Electrochemical defect revealing in thin SiGe layers
Werner, J., Schalberger, P., Oehme, M., Lyutovich, K., Kasper, E.
Published in Thin solid films (05.06.2006)
Published in Thin solid films (05.06.2006)
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Relaxed SiGe buffers with thicknesses below 0.1 μm
BAUER, M, LYUTOVICH, K, OEHME, M, KASPER, E, HERZOG, H.-J, ERNST, F
Published in Thin solid films (03.07.2000)
Published in Thin solid films (03.07.2000)
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Ion bombardment induced morphology modifications on self-organized semiconductor surfaces
Hofer, C., Abermann, S., Teichert, C., Bobek, T., Kurz, H., Lyutovich, K., Kasper, E.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.02.2004)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.02.2004)
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X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (⩽100 nm) using a low temperature growth step
Ni, W.-X, Lyutovich, K, Alami, J, Tengstedt, C, Bauer, M, Kasper, E
Published in Journal of Crystal Growth (01.07.2001)
Published in Journal of Crystal Growth (01.07.2001)
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High Ge content photodetectors on thin SiGe buffers
Bauer, M, Schöllhorn, C, Lyutovich, K, Kasper, E, Jutzi, M, Berroth, M
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Thin SiGe buffers with high Ge content for n-MOSFETs
Lyutovich, K, Bauer, M, Kasper, E, Herzog, H.-J, Perova, T, Maurice, R, Hofer, C, Teichert, C
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2002)
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Relaxed SiGe buffer layer growth with point defect injection
LYUTOVICH, K, KASPER, E, ERNST, F, BAUER, M, OEHME, M
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (14.02.2000)
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