Co-optimization of the metal gate/high-k stack to achieve high-field mobility >90% of SiO2 universal mobility with an EOT= ∼1 nm
ZHIBO ZHANG, SONG, S. C, QUEVEDO-LOPEZ, M. A, CHOI, Kisik, KIRSCH, Paul, LYSAGHT, Pat, BYOUNG HUN LEE
Published in IEEE electron device letters (01.03.2006)
Published in IEEE electron device letters (01.03.2006)
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Journal Article
Interfacial Roughness of Hf x Si 1-x O 2 High-k films by TEM and AFM
Foran, Brendan, Gondran, Carolyn, Lysaght, Pat
Published in Microscopy and microanalysis (01.08.2003)
Published in Microscopy and microanalysis (01.08.2003)
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Journal Article
Interfacial Roughness of HfxSi1-xO2 High-k films by TEM and AFM
Foran, Brendan, Gondran, Carolyn, Lysaght, Pat
Published in Microscopy and microanalysis (01.08.2003)
Published in Microscopy and microanalysis (01.08.2003)
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Journal Article
Technology and Reliability Challenges of Sub-nm High EOT High-k/ Metal Gate Electrode Transistors
Peterson, Jeff, Kirsch, Paul, Bersuker, Gennadi, Krishnan, Siddarth, Mahji, Prashant, Lysaght, Pat, Quevedo-Lopez, Manuel, Li, Hong-Jyh, Senzaki, Yoshi, Harris, Rusty, Young, Chadwin D., Choi, Rino, Sim, Johnny, Barnett, Joel, Moumen, Naim, Huffman, Craig, Gardner, Mark I., Brown, George A., Zeitzoff, Peter M., Lee, Byoung-Hun, Ramiller, Chuck, Huff, Howard R.
Published in Meeting abstracts (Electrochemical Society) (22.02.2006)
Published in Meeting abstracts (Electrochemical Society) (22.02.2006)
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Journal Article