Anisotropic Reactive Ion Etching of Aluminum Using Cl sub 2 , BCl sub 3 , and CH sub 4 Gases
Lutze, J W, Perera, A H, Krusius, J P
Published in Journal of the Electrochemical Society (01.01.1990)
Published in Journal of the Electrochemical Society (01.01.1990)
Get full text
Journal Article
A low-power high-speed ion-implanted JFET for InP-based monolithic optoelectronic IC's
Kim, S.J., Wang, K.W., Vella-Coleiro, G.P., Lutze, J.W., Ota, Y., Guth, G.
Published in IEEE electron device letters (01.11.1987)
Published in IEEE electron device letters (01.11.1987)
Get full text
Journal Article
Device drive current degradation observed with retrograde channel profiles
Venkatesan, S., Lutze, J.W., Lage, C., Taylor, W.J.
Published in Proceedings of International Electron Devices Meeting (1995)
Published in Proceedings of International Electron Devices Meeting (1995)
Get full text
Conference Proceeding