Growth of III-N/graphene heterostructures in single vapor phase epitaxial process
Lundin, W.V., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Davydov, V.Yu, Smirnov, A.N., Eliseyev, I.A., Yagovkina, M.A., Brunkov, P.N., Lundina, E.Yu, Markov, L.K., Tsatsulnikov, A.F.
Published in Journal of crystal growth (15.12.2018)
Published in Journal of crystal growth (15.12.2018)
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Journal Article
High growth rate MOVPE of Al(Ga)N in planetary reactor
Lundin, W.V., Nikolaev, A.E., Yagovkina, M.A., Brunkov, P.N., Rozhavskaya, M.M., Ber, B.Ya, Kazantsev, D.Yu, Tsatsulnikov, A.F., Lobanova, A.V., Talalaev, R.A.
Published in Journal of crystal growth (01.08.2012)
Published in Journal of crystal growth (01.08.2012)
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Journal Article
InGaN/GaN heterostructures grown by submonolayer deposition
Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Sakharov, A. V., Musikhin, Yu. G., Usov, S. O., Mizerov, M. N., Cherkashin, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
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Journal Article
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
Tsatsulnikov, A. F., Lundin, W. V., Zavarin, E. E., Nikolaev, A. E., Sakharov, A. V., Rozhavskaya, M. M., Usov, S. O., Brunkov, P. N., Synitsin, M. A., Davydov, D. V., Mizerov, M. N., Cherkashin, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2012)
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Journal Article
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Cherkashin, N. A., Ber, B. Ya, Kazantsev, D. Yu, Mizerov, M. N., Park, Hee Seok, Hytch, M., Hue, F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
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Journal Article
The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
Sizov, V. S., Tsatsulnikov, A. F., Sakharov, A. V., Lundin, W. V., Zavarin, E. E., Cherkashin, N. A., Hÿtch, M. J., Nikolaev, A. E., Mintairov, A. M., He, Yan, Merz, J. L.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2010)
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Journal Article
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
Lundin, W. V., Zavarin, E. E., Sinitsyn, M. A., Sakharov, A. V., Usov, S. O., Nikolaev, A. E., Davydov, D. V., Cherkashin, N. A., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2010)
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Journal Article
Formation of composite InGaN/GaN/InAlN quantum dots
Tsatsul’nikov, A. F., Zavarin, E. E., Kryzhanovskaya, N. V., Lundin, W. V., Saharov, A. V., Usov, S. O., Brunkov, P. N., Goncharov, V. V., Cherkashin, N. A., Hytch, M.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2010)
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Journal Article
Effects of proton implantation on electrical and recombination properties of n-GaN
Polyakov, A.Y, Usikov, A.S, Theys, B, Smirnov, N.B, Govorkov, A.V, Jomard, F, Shmidt, N.M, Lundin, W.V
Published in Solid-state electronics (01.11.2000)
Published in Solid-state electronics (01.11.2000)
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Journal Article
Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs
Arteev, D.S., Sakharov, A.V., Nikolaev, A.E., Lundin, W.V., Tsatsulnikov, A.F.
Published in Journal of luminescence (01.06.2021)
Published in Journal of luminescence (01.06.2021)
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Journal Article
Deep centers spectra and scanning electron microscope studies of p-GaN films prepared by metallorganic chemical vapor deposition on sapphire
Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Usikov, A.S., Shmidt, N.M., Lundin, W.V.
Published in Solid-state electronics (01.02.2001)
Published in Solid-state electronics (01.02.2001)
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Journal Article
Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices
Davydov, V.Yu, Smirnov, A.N., Goncharuk, I.N., Kyutt, R.N., Scheglov, M.P., Baidakova, M.V., Lundin, W.V., Zavarin, E.E., Smirnov, M.B., Karpov, S.V., Harima, H.
Published in physica status solidi (b) (01.12.2002)
Published in physica status solidi (b) (01.12.2002)
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Journal Article
Study of silicon nitride deposition in III-N MOVPE reactors
Lundin, W.V., Rodin, S.N., Zavarin, E.E., Sakharov, A.V., Zakheim, D.A., Nikolaev, A.E., Tsatsulnikov, A.F.
Published in Journal of crystal growth (01.12.2020)
Published in Journal of crystal growth (01.12.2020)
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Journal Article
Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes
Barettin, Daniele, Maur, Matthias Auf der, Carlo, Aldo di, Pecchia, Alessandro, Tsatsulnikov, Andrei F, Sakharov, Alexei V, Lundin, Wsevolod V, Nikolaev, Andrei E, Usov, Sergey O, Cherkashin, Nikolay, Hÿtch, Martin J, Karpov, Sergey Yu
Published in Nanotechnology (06.01.2017)
Published in Nanotechnology (06.01.2017)
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Journal Article
Fast AlGaN growth in a whole composition range in planetary reactor
Lundin, W.V., Nikolaev, A.E., Rozhavskaya, M.M., Zavarin, E.E., Sakharov, A.V., Troshkov, S.I., Yagovkina, M.A., Tsatsulnikov, A.F.
Published in Journal of crystal growth (01.05.2013)
Published in Journal of crystal growth (01.05.2013)
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Journal Article
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Tikhomirov, V. G., Zemlyakov, V. E., Volkov, V. V., Parnes, Ya. M., Vyuginov, V. N., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Tsatsulnikov, A. F., Cherkashin, N. A., Mizerov, M. N., Ustinov, V. M.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2016)
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Journal Article
Elastic strains and delocalized optical phonons in AlN/GaN superlattices
Pankin, D. V., Smirnov, M. B., Davydov, V. Yu, Smirnov, A. N., Zavarin, E. E., Lundin, W. V.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2016)
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Journal Article
Hydrogen effects in III-nitride MOVPE
Yakovlev, E.V., Talalaev, R.A., Segal, A.S., Lobanova, A.V., Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A., Tsatsulnikov, A.F., Nikolaev, A.E.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Lundin, W.V., Nikolaev, A.E., Sakharov, A.V., Zavarin, E.E., Valkovskiy, G.A., Yagovkina, M.A., Usov, S.O., Kryzhanovskaya, N.V., Sizov, V.S., Brunkov, P.N., Zakgeim, A.L., Cherniakov, A.E., Cherkashin, N.A., Hytch, M.J., Yakovlev, E.V., Bazarevskiy, D.S., Rozhavskaya, M.M., Tsatsulnikov, A.F.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article
InGaN/GaN light-emitting diode microwires of submillimeter length
Lundin, W. V., Rodin, S. N., Sakharov, A. V., Lundina, E. Yu, Usov, S. O., Zadiranov, Yu. M., Troshkov, S. I., Tsatsulnikov, A. F.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2017)
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Journal Article