GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Yatabe, Zenji
Published in Applied physics express (16.02.2021)
Published in Applied physics express (16.02.2021)
Get full text
Journal Article
GaN-based MIS-HEMTs with Al 2 O 3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Yatabe, Zenji
Published in Applied physics express (01.03.2021)
Published in Applied physics express (01.03.2021)
Get full text
Journal Article
Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs
Motoyama, Tomohiro, Yatabe, Zenji, Nakamura, Yusui, Baratov, Ali, Shan Low, Rui, Urano, Shun, Asubar, Joel T., Kuzuhara, Masaaki
Published in 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) (17.11.2021)
Published in 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) (17.11.2021)
Get full text
Conference Proceeding