Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster
Quinci, T., Kuyyalil, J., Thanh, T. Nguyen, Wang, Y. Ping, Almosni, S., Létoublon, A., Rohel, T., Tavernier, K., Chevalier, N., Dehaese, O., Boudet, N., Bérar, J.F., Loualiche, S., Even, J., Bertru, N., Corre, A. Le, Durand, O., Cornet, C.
Published in Journal of crystal growth (01.10.2013)
Published in Journal of crystal growth (01.10.2013)
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Journal Article
Structural and electronic properties of BAs and BxGa1−xAs, BxIn1−xAs alloys
Chimot, N., Even, J., Folliot, H., Loualiche, S.
Published in Physica. B, Condensed matter (15.07.2005)
Published in Physica. B, Condensed matter (15.07.2005)
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Journal Article
Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering
Guo, W., Bondi, A., Cornet, C., Létoublon, A., Durand, O., Rohel, T., Boyer-Richard, S., Bertru, N., Loualiche, S., Even, J., Le Corre, A.
Published in Applied surface science (15.01.2012)
Published in Applied surface science (15.01.2012)
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Journal Article
23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers
Klaime, K, Calò, C, Piron, R, Paranthoen, C, Thiam, D, Batte, T, Dehaese, O, Le Pouliquen, J, Loualiche, S, Le Corre, A, Merghem, K, Martinez, A, Ramdane, A
Published in Optics express (18.11.2013)
Published in Optics express (18.11.2013)
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Journal Article
Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m
Azouigui, S., Dagens, B., Lelarge, F., Provost, J.-G., Make, D., Le Gouezigou, O., Accard, A., Martinez, A., Merghem, K., Grillot, F., Dehaese, O., Piron, R., Loualiche, S., Qin Zou, Ramdane, A.
Published in IEEE journal of selected topics in quantum electronics (01.05.2009)
Published in IEEE journal of selected topics in quantum electronics (01.05.2009)
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Journal Article
Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates
Nguyen Thanh, T., Robert, C., Giudicelli, E., Létoublon, A., Cornet, C., Ponchet, A., Rohel, T., Balocchi, A., Micha, J.S., Perrin, M., Loualiche, S., Marie, X., Bertru, N., Durand, O., Le Corre, A.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Journal Article
Conference Proceeding
Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber
Lecourt, J.-B., Martel, G., Guézo, M., Labbé, C., Loualiche, S.
Published in Optics communications (01.07.2006)
Published in Optics communications (01.07.2006)
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Journal Article
Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
Paranthoen, C., Platz, C., Moreau, G., Bertru, N., Dehaese, O., Le Corre, A., Miska, P., Even, J., Folliot, H., Labbé, C., Patriarche, G., Simon, J.C., Loualiche, S.
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Journal Article
Conference Proceeding
Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD
Pedesseau, L, Even, J, Bondi, A, Guo, W, Richard, S, Folliot, H, Labbe, C, Cornet, C, Dehaese, O, Le Corre, A, Durand, O, Loualiche, S
Published in Journal of physics. D, Applied physics (21.08.2008)
Published in Journal of physics. D, Applied physics (21.08.2008)
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Journal Article
Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
Caroff, P., Bertru, N., Platz, C., Dehaese, O., Le Corre, A., Loualiche, S.
Published in Journal of crystal growth (01.01.2005)
Published in Journal of crystal growth (01.01.2005)
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Journal Article
Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
PLATZ, C, PARANTHOËN, C, MOREAU, G, SIMON, J. C, RAMDANE, A, CAROFF, P, BERTRU, N, LABBE, C, EVEN, J, DEHAESE, O, FOLLIOT, H, LE CORRE, A, LOUALICHE, S
Published in Semiconductor science and technology (01.05.2005)
Published in Semiconductor science and technology (01.05.2005)
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Journal Article
Spectral Analysis of 1.55- \mum InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model
Grillot, F., Veselinov, K., Gioannini, M., Montrosset, I., Even, J., Piron, R., Homeyer, E., Loualiche, S.
Published in IEEE journal of quantum electronics (01.07.2009)
Published in IEEE journal of quantum electronics (01.07.2009)
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Journal Article
Si wafer bonded of a-Si∕a-SiNx distributed Bragg reflectors for 1.55-μm-wavelength vertical cavity surface emitting lasers
Levallois, C., Le Corre, A., Loualiche, S., Dehaese, O., Folliot, H., Paranthoen, C., Thoumyre, F., Labbé, C.
Published in Journal of applied physics (15.08.2005)
Published in Journal of applied physics (15.08.2005)
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Journal Article
Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells
Guézo, M., Loualiche, S., Even, J., Le Corre, A., Dehaese, O., Pellan, Y., Marceaux, A.
Published in Journal of applied physics (15.08.2003)
Published in Journal of applied physics (15.08.2003)
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Journal Article
First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
HOMEYER, E, PIRON, R, GRILLOT, F, DEHAESE, O, TAVERNIER, K, MACE, E, LE CORRE, A, LOUALICHE, S
Published in Semiconductor science and technology (01.07.2007)
Published in Semiconductor science and technology (01.07.2007)
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Journal Article
Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
Miska, P, Paranthoen, C, Even, J, Dehaese, O, Folliot, H, Bertru, N, Loualiche, S, Senes, M, Marie, X
Published in Semiconductor science and technology (01.10.2002)
Published in Semiconductor science and technology (01.10.2002)
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