Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser
Ji, C., Chubun, N., Broeke, R.G., Cao, J., Du, Y., Yoo, S.J.B., Liou, K.Y., Lothian, J.R., Vatanapradit, S., Chu, S.N.G., Patel, B., Hobson, W.S., Tsang, W.T.
Published in IEEE photonics technology letters (15.02.2006)
Published in IEEE photonics technology letters (15.02.2006)
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Journal Article
In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results
Yu-Chi Wang, Jenn-Ming Kuo, Fan Ren, Lothian, J.R., Huan-Shang Tsai, Weiner, J.S., Hao-Chung Kuo, Chun-Hsiung Lin, Young-Kai Chen, Mayo, W.E.
Published in IEEE transactions on microwave theory and techniques (01.08.1999)
Published in IEEE transactions on microwave theory and techniques (01.08.1999)
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Journal Article
Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy
Wang, Y.C., Kuo, J.M., Ren, F., Lothian, J.R., Weiner, J.S., Lin, J., Mayo, W.E., Chen, Y.K.
Published in IEEE electron device letters (01.11.1997)
Published in IEEE electron device letters (01.11.1997)
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Journal Article
Plasma damage effects in InAlN field effect transistors
Ren, F., Lothian, J.R., Mackenzie, J.D., Abernathy, C.R., Vartuli, C.B., Pearton, S.J., Wilson, R.G.
Published in Solid-state electronics (01.12.1996)
Published in Solid-state electronics (01.12.1996)
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Journal Article
Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application
Ren, F., Abernathy, C.R., Pearton, S.J., Lothian, J.R., Wisk, P.W., Fullowan, T.R., Chen, Y.-K., Yang, L.W., Fu, S.T., Brozovich, R.S., Lin, H.H.
Published in IEEE electron device letters (01.07.1993)
Published in IEEE electron device letters (01.07.1993)
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Journal Article
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide
Ren, F., Hong, M., Hobson, W.S., Kuo, J.M., Lothian, J.R., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, A.Y.
Published in Solid-state electronics (01.11.1997)
Published in Solid-state electronics (01.11.1997)
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Journal Article
Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
Ren, F., Kuo, J.M., Hong, M., Hobson, W.S., Lothian, J.R., Lin, J., Tsai, H.S., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, A.Y.
Published in IEEE electron device letters (01.08.1998)
Published in IEEE electron device letters (01.08.1998)
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Journal Article
Thermal simulations of high power, bulk GaN rectifiers
Mehandru, R., Kim, S., Kim, J., Ren, F., Lothian, J.R., Pearton, S.J., Park, S.S., Park, Y.J.
Published in Solid-state electronics (01.06.2003)
Published in Solid-state electronics (01.06.2003)
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Journal Article
Pt/Ti/Pt/Au Schottky contacts on HEMTs
Lothian, J.R, Ren, F, Kuo, J.M, Weiner, J.S, Chen, Y.K
Published in Solid-state electronics (01.05.1997)
Published in Solid-state electronics (01.05.1997)
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Journal Article
Passivation of carbon doping in InGaAs during ECR-CVD of SiN x
Ren, F, Hamm, R.A, Lothian, J.R, Wilson, R.G, Pearton, S.J
Published in Solid-state electronics (1996)
Published in Solid-state electronics (1996)
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Journal Article
XFROG characterization of a 10 GHz colliding-pulse mode-locked laser
Fontaine, N.K., Ji, C., Broeke, R.G., Cao, J., Seo, S.W., Yoo, S.J.B., Liou, K.Y., Lothian, J.R., Vatanapradit, S., Chu, S.N.G., Patel, B., Hobson, W.S., Tsang, W.T.
Published in 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference (01.05.2006)
Published in 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference (01.05.2006)
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Conference Proceeding
Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs
Wang, Y.C, Kuo, J.M, Ren, F, Lothian, J.R, Mayo, W.E
Published in Solid-state electronics (01.06.1998)
Published in Solid-state electronics (01.06.1998)
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Journal Article
Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs
Ren, F., Kuo, J.M., Hong, M., Hobson, W.S., Lothian, J.R., Lin, J., Tsai, H.S., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, A.Y.
Published in IEEE electron device letters (01.08.1998)
Published in IEEE electron device letters (01.08.1998)
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Journal Article
Recessed gate GaN field effect transistor
Ren, F., Lothian, J.R., Chen, Y.K., Karlicek, R.F., Tran, L., Schurmann, M., Stall, R.A., Lee, J.W., Pearton, S.J.
Published in Solid-state electronics (01.11.1997)
Published in Solid-state electronics (01.11.1997)
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Journal Article
Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs
Ren, F, Kopf, R.F, Kuo, J.M, Lothian, J.R, Lee, J.W, Pearton, S.J, Shul, R.J, Constantine, C, Johnson, D
Published in Solid-state electronics (01.05.1998)
Published in Solid-state electronics (01.05.1998)
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Journal Article
High performance pseudomorphic [formula omitted] power HEMTs
Ren, F., Lothian, J.R., Tsai, H.S., Kuo, J.M., Lin, J., Weiner, J.S., Ryan, R.W., Tate, A., Chen, Y.K.
Published in Solid-state electronics (01.12.1997)
Published in Solid-state electronics (01.12.1997)
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Journal Article
Implanted p– n junctions in GaN
Cao, X.A, LaRoche, J.R, Ren, F, Pearton, S.J, Lothian, J.R, Singh, R.K, Wilson, R.G, Guo, H.J, Pennycook, S.J
Published in Solid-state electronics (1999)
Published in Solid-state electronics (1999)
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Journal Article