High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures
Consejo, Ch, Konczewicz, L., Contreras, S., Jouault, B., Łepkowsky, S., Zielinski, M., Robert, J. L., Lorenzini, Ph, Cordier, Y.
Published in Phys. Status Solidi (b). Vol. 235, no. 2, pp. 232-237. 2003 (01.02.2003)
Published in Phys. Status Solidi (b). Vol. 235, no. 2, pp. 232-237. 2003 (01.02.2003)
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Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy
Beaumont, B, Haffouz, S, Gibart, P, Leroux, M, Lorenzini, Ph, Calleja, E, Muñoz, E
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (18.12.1997)
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DX centre in Si-doped AlxGa1-xAs: charge state and capture mechanism
Mosser, V, Contreras, S, Lorenzini, P, Robert, J L, Piotrzkowski, R, Zawadzki, W
Published in Semiconductor science and technology (01.01.1992)
Published in Semiconductor science and technology (01.01.1992)
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Physics of AlGaAs/InGaAs/GaAs heterostructures for high performance magnetic sensors
Mosser, V., Contreras, S., Aboulhouda, S., Lorenzini, Ph, Kobbi, F., Robert, J. L., Zekentes, K.
Published in ESSDERC '93: 23rd European solid State Device Research Conference (01.09.1993)
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Published in ESSDERC '93: 23rd European solid State Device Research Conference (01.09.1993)
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