Noise Immunity and its Temperature Characteristics Study of the Capacitive-Loaded Level Shift Circuit for High Voltage Gate Drive IC
Zhu, Jing, Zhang, Yunwu, Sun, Weifeng, Lu, Yangyang, Shi, Longxing, Gu, Yan, Zhang, Sen
Published in IEEE transactions on industrial electronics (1982) (01.04.2018)
Published in IEEE transactions on industrial electronics (1982) (01.04.2018)
Get full text
Journal Article
A Bi-Directional, Zero-Latency Adaptive Clocking Circuit in a 28-nm Wide AVFS System
Shan, Weiwei, Dai, Wentao, Wan, Liang, Lu, Minyi, Shi, Longxing, Seok, Mingoo, Yang, Jun
Published in IEEE journal of solid-state circuits (01.03.2020)
Published in IEEE journal of solid-state circuits (01.03.2020)
Get full text
Journal Article
Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region
Zhu, Jing, Zhang, Long, Sun, Weifeng, Chen, Meng, Zhou, Feng, Zhao, Minna, Shi, Longxing, Gu, Yan, Zhang, Sen
Published in IEEE transactions on electron devices (01.05.2016)
Published in IEEE transactions on electron devices (01.05.2016)
Get full text
Journal Article
Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches
Zhang, Long, Zhu, Jing, Zhao, Minna, Liu, Siyang, Sun, Weifeng, Shi, Longxing
Published in IEEE transactions on electron devices (01.09.2017)
Published in IEEE transactions on electron devices (01.09.2017)
Get full text
Journal Article
Further Study of the U-Shaped Channel SOI-LIGBT With Enhanced Current Density for High-Voltage Monolithic ICs
Zhu, Jing, Zhang, Long, Sun, Weifeng, Du, Yicheng, Huang, Keqin, Chen, Meng, Shi, Longxing, Gu, Yan, Zhang, Sen
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
Get full text
Journal Article
Turn-Off Transient of Superjunction SOI Lateral IGBTs: Mechanism and Optimization Strategy
Zhang, Long, Zhu, Jing, Ma, Jie, Cao, Shilin, Li, Ankang, Li, Shaohong, Ye, Ran, Sun, Weifeng, Zhao, Jianfeng, Shi, Longxing
Published in IEEE transactions on electron devices (01.03.2019)
Published in IEEE transactions on electron devices (01.03.2019)
Get full text
Journal Article
A Novel Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor With Dual Trenches for Three-Phase Single Chip Inverter ICs
Weifeng Sun, Jing Zhu, Long Zhang, Hui Yu, Yicheng Du, Keqin Huang, Shengli Lu, Longxing Shi, Yangbo Yi
Published in IEEE electron device letters (01.07.2015)
Published in IEEE electron device letters (01.07.2015)
Get full text
Journal Article
Novel Snapback-Free Reverse-Conducting SOI-LIGBT With Dual Embedded Diodes
Zhang, Long, Zhu, Jing, Sun, Weifeng, Chen, Meng, Zhao, Minna, Huang, Xuequan, Chen, Jiajun, Qian, Yuxiang, Shi, Longxing
Published in IEEE transactions on electron devices (01.03.2017)
Published in IEEE transactions on electron devices (01.03.2017)
Get full text
Journal Article
Low-Loss SOI-LIGBT With Dual Deep-Oxide Trenches
Zhang, Long, Zhu, Jing, Sun, Weifeng, Zhao, Minna, Chen, Jiajun, Huang, Xuequan, Shi, Longxing, Chen, Jian, Ding, Desheng
Published in IEEE transactions on electron devices (01.08.2017)
Published in IEEE transactions on electron devices (01.08.2017)
Get full text
Journal Article
EERA-ASR: An Energy-Efficient Reconfigurable Architecture for Automatic Speech Recognition With Hybrid DNN and Approximate Computing
Liu, Bo, Qin, Hai, Gong, Yu, Ge, Wei, Xia, Mengwen, Shi, Longxing
Published in IEEE access (01.01.2018)
Published in IEEE access (01.01.2018)
Get full text
Journal Article
A U-Shaped Channel SOI-LIGBT With Dual Trenches
Zhang, Long, Zhu, Jing, Sun, Weifeng, Zhao, Minna, Chen, Jiajun, Huang, Xuequan, Ding, Desheng, Chen, Jian, Shi, Longxing
Published in IEEE transactions on electron devices (01.06.2017)
Published in IEEE transactions on electron devices (01.06.2017)
Get full text
Journal Article
A Height Constrained Adaptive Kalman Filtering Based on Climbing Motion Model for GNSS Positioning
Yang, Jun, Ma, Jinfeng, Liu, Xinning, Qi, Longning, Wang, Zhen, Zhuang, Yuan, Shi, Longxing
Published in IEEE sensors journal (01.11.2017)
Published in IEEE sensors journal (01.11.2017)
Get full text
Journal Article
A Novel Compact High-Voltage LDMOS Transistor Model for Circuit Simulation
Shi, Longxing, Jia, Kan, Sun, Weifeng
Published in IEEE transactions on electron devices (01.01.2013)
Published in IEEE transactions on electron devices (01.01.2013)
Get full text
Journal Article
A Double Dwell High Sensitivity GPS Acquisition Scheme Using Binarized Convolution Neural Network
Wang, Zhen, Zhuang, Yuan, Yang, Jun, Zhang, Hengfeng, Dong, Wei, Wang, Min, Hua, Luchi, Liu, Bo, Shi, Longxing
Published in Sensors (Basel, Switzerland) (09.05.2018)
Published in Sensors (Basel, Switzerland) (09.05.2018)
Get full text
Journal Article
A Low-Power 2.4-GHz Receiver Front End With a Lateral Current-Reusing Technique
Chen, Chao, Wu, Jianhui, Huang, Dan, Shi, Longxing
Published in IEEE transactions on circuits and systems. II, Express briefs (01.08.2014)
Published in IEEE transactions on circuits and systems. II, Express briefs (01.08.2014)
Get full text
Journal Article