Stability of GaN HEMT Device Under Static and Dynamic Gate Stress
Gao, Linfei, Zhong, Ze, Zhang, Qiyan, Li, Xiaohua, Xiong, Xinbo, Chen, Shaojun, Chen, Longkou, Yan, Huaibao, Zhang, Anle, Han, Jiajun, Zhuang, Wenrong, Qiu, Feng, Chiu, Hsien-Chin, Huang, Shuangwu, Liu, Xinke
Published in IEEE journal of the Electron Devices Society (01.01.2024)
Published in IEEE journal of the Electron Devices Society (01.01.2024)
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Journal Article
Vertical GaN Schottky Barrier Diode with Record High FOM (1.23GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy
Zou, Ping, Wang, Haofan, Wu, Junye, Liao, Zeliang, Huang, Shuangwu, Zhong, Ze, Li, Xiaobo, Qiu, Feng, Zhuang, Wenrong, Chen, Longkou, Liu, Xinke
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding