A photoemission study of erbium silicide ultra-thin films epitaxially grown on Si(111)
Veuillen, J.-Y., Lollman, D.B.B., Nguyen Tan, T.A., Magaud, L.
Published in Applied surface science (01.03.1993)
Published in Applied surface science (01.03.1993)
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Journal Article
Conference Proceeding
The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)
LOLLMAN, D. B. B, NGUYEN TAN, T. A, VEUILLEN, J.-Y, MURET, P, LEFKI, K, BRUNEL, M, DUPUY, J. C
Published in Applied surface science (01.03.1993)
Published in Applied surface science (01.03.1993)
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Conference Proceeding
Journal Article
Surface electronic structure of erbium silicide epitaxially grown on Si(111)
Veuillen, J.-Y., Magaud, L., Lollman, D.B.B., Nguyen Tan, T.A.
Published in Surface science (15.05.1992)
Published in Surface science (15.05.1992)
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Journal Article
Conference Proceeding
A photoemission study of the interdiffusion of Si in Er films deposited on Si(111)(7 × 7) at room temperature
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Journal Article
Conference Proceeding
Electronic properties of epitaxial erbium silicide
Veuillen, J.Y., Tan, T.A.Nguyen, Lollman, D.B.B., Guerfi, N., Cinti, R.
Published in Surface science (01.07.1991)
Published in Surface science (01.07.1991)
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Journal Article
Electronic structure of erbium silicide ultra-thin films
Veuillen, J.-Y., Nguyen Tan, T.A., Lollman, D.B.B.
Published in Surface science letters (01.08.1993)
Published in Surface science letters (01.08.1993)
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Journal Article
Electronic properties of epitaxial erbium silicide
Veuillen, J.Y., Nguyen Tan, T.A., Lollman, D.B.B., Guerfi, N., Cinti, R.
Published in Surface science letters (01.07.1991)
Published in Surface science letters (01.07.1991)
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Journal Article