Antimony and boron diffusion in SiGe and Si under the influence of injected point defects
Bonar, J M, Willoughby, A F; W, Dan, A H, Mcgregor, B M, Lerch, W, Loeffelmacher, D, Cooke, G A, Dowsett, M G
Published in Journal of materials science. Materials in electronics (01.06.2001)
Published in Journal of materials science. Materials in electronics (01.06.2001)
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Journal Article
Transient thermal behavior in a new RTP chamber
Tillmann, A., Kreiser, U., Munzinger, P., Frigge, S., Buschbaum, S., Schmid, P., Loeffelmacher, D., Merkwitz, M., Theilig, T.
Published in Journal of electronic materials (01.12.1998)
Published in Journal of electronic materials (01.12.1998)
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Journal Article
The significance of controlling "off-axis" (from 1-0-0) oriented Si wafers during high angle implants
Downey, D.F., Arevalo, E.A., Eddy, R.J., Lerch, W., Loeffelmacher, D., Ostermeir, R.
Published in 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) (2000)
Published in 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) (2000)
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