Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev, B. A., Lobanov, D. N., Krasil’nikova, L. V., Bushuykin, P. A., Yablonskiy, A. N., Novikov, A. V., Davydov, V. Yu, Yunin, P. A., Kalinnikov, M. I., Skorohodov, E. V., Krasil’nik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
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Journal Article
Mechanism of Band Gap Formation in the Spin-Wave Spectrum of Coupled Magnon Crystals
Morozova, M. A., Lobanov, N. D., Matveev, O. V., Nikitov, S. A.
Published in JETP letters (01.06.2022)
Published in JETP letters (01.06.2022)
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Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation
Kalinnikov, M. A., Lobanov, D. N., Kudryavtsev, K. E., Andreev, B. A., Yunin, P. A., Krasilnikova, L. V., Novikov, A. V., Skorokhodov, E. V., Skorokhodov, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2024)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2024)
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Journal Article
Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures
Andreev, B. A., Kudryavtsev, K. E., Yablonskiy, A. N., Lobanov, D. N., Bushuykin, P. A., Krasilnikova, L. V., Skorokhodov, E. V., Yunin, P. A., Novikov, A. V., Davydov, V. Yu, Krasilnik, Z. F.
Published in Scientific reports (21.06.2018)
Published in Scientific reports (21.06.2018)
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Journal Article
Microscopic and optical investigation of Ge nanoislands on silicon substrates
Krasil'nik, Z F, Lytvyn, P, Lobanov, D N, Mestres, N, Novikov, A V, Pascual, J, Valakh, M Ya, Yukhymchuk, V A
Published in Nanotechnology (01.02.2002)
Published in Nanotechnology (01.02.2002)
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Journal Article
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
Lobanov, D.N., Novikov, A.V., Vostokov, N.V., Drozdov, Y.N., Yablonskiy, A.N., Krasilnik, Z.F., Stoffel, M., Denker, U., Schmidt, O.G.
Published in Optical materials (01.02.2005)
Published in Optical materials (01.02.2005)
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Journal Article
Conference Proceeding
SiGe nanostructures with self-assembled islands for Si-based optoelectronics
Krasilnik, Z F, Novikov, A V, Lobanov, D N, Kudryavtsev, K E, Antonov, A V, Obolenskiy, S V, Zakharov, N D, Werner, P
Published in Semiconductor science and technology (01.01.2011)
Published in Semiconductor science and technology (01.01.2011)
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Journal Article
Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band
Bagaev, V. S., Krivobok, V. S., Nikolaev, S. N., Onishchenko, E. E., Skorikov, M. L., Novikov, A. V., Lobanov, D. N.
Published in JETP letters (01.09.2011)
Published in JETP letters (01.09.2011)
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Journal Article
Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
Bushuykin, P. A., Novikov, A. V., Andreev, B. A., Lobanov, D. N., Yunin, P. A., Skorokhodov, E. V., Krasil’nikova, L. V., Demidov, E. V., Savchenko, G. M., Davydov, V. Yu
Published in Semiconductors (Woodbury, N.Y.) (01.12.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2017)
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Journal Article
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov, D. N., Novikov, A. V., Andreev, B. A., Bushuykin, P. A., Yunin, P. A., Skorohodov, E. V., Krasilnikova, L. V.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2016)
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Journal Article
Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers
Shaleev, M.V., Novikov, A.V., Kuznetsov, O.A., Yablonsky, A.N., Vostokov, N.V., Drozdov, Yu.N., Lobanov, D.N., Krasilnik, Z.F.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05.12.2005)
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Journal Article
Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Lobanov, D. N., Novikov, A. V., Yunin, P. A., Skorohodov, E. V., Shaleev, M. V., Drozdov, M. N., Khrykin, O. I., Buzanov, O. A., Alenkov, V. V., Folomin, P. I., Gritsenko, A. B.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2016)
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Journal Article
Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures
Aleshkin, V.Ya, Antonov, A.V., Gavrilenko, V.I., Kozlov, D.V., Krasil’nik, Z.F., Lobanov, D.N., Novikov, A.V.
Published in Physica. B, Condensed matter (31.12.2003)
Published in Physica. B, Condensed matter (31.12.2003)
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Journal Article
The elastic strain and composition of self-assembled GeSi islands on Si(001)
Krasil'nik, Z.F, Dolgov, I.V, Drozdov, Yu.N, Filatov, D.O, Gusev, S.A, Lobanov, D.N, Moldavskaya, L.D, Novikov, A.V, Postnikov, V.V, Vostokov, N.V
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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Journal Article
Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands
Drozdov, Yu.N., Krasilnik, Z.F., Kudryavtsev, К.Е., Lobanov, D.N., Novikov, А.V., Shaleev, М.V., Shengurov, D.V., Shmagin, V.B., Yablonskiy, А.N.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Journal Article
Conference Proceeding
Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer
Shaleev, M.V., Novikov, A.V., Yablonskiy, A.N., Drozdov, Y.N., Kuznetsov, O.A., Lobanov, D.N., Krasilnik, Z.F.
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Journal Article
Conference Proceeding
Radiation hardness of GeSi heterostructures with thin Ge layers
Leitão, J.P., Santos, N.M., Sobolev, N.A., Correia, M.R., Stepina, N.P., Carmo, M.C., Magalhães, S., Alves, E., Novikov, A.V., Shaleev, M.V., Lobanov, D.N., Krasilnik, Z.F.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.02.2008)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.02.2008)
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Journal Article
Spin current for tuning the band gaps of spin waves
Morozova, M.A., Lobanov, N.D., Matveev, O.V., Nikitov, S.A.
Published in Journal of magnetism and magnetic materials (15.12.2023)
Published in Journal of magnetism and magnetic materials (15.12.2023)
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