Design of projected phase-change memory mushroom cells for low-resistance drift
Philip, Timothy M., Brew, Kevin W., Li, Ning, Simon, Andrew, Liu, Zuoguang, Ok, Injo, Adusumilli, Praneet, Saraf, Iqbal, Conti, Richard, Ogundipe, Odunayo, Robison, Robert R., Saulnier, Nicole, Sebastian, Abu, Narayanan, Vijay
Published in MRS bulletin (01.03.2023)
Published in MRS bulletin (01.03.2023)
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Sub- 10^~\Omega -cm2 n-Type Contact Resistivity for FinFET Technology
Niimi, Hiroaki, Zuoguang Liu, Gluschenkov, Oleg, Mochizuki, Shogo, Fronheiser, Jody, Juntao Li, Demarest, James, Chen Zhang, Bei Liu, Jie Yang, Raymond, Mark, Haran, Bala, Huiming Bu, Yamashita, Tenko
Published in IEEE electron device letters (01.11.2016)
Published in IEEE electron device letters (01.11.2016)
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Journal Article
Impact of Phase‐Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large‐Scale Deep Learning Networks
Han, Jin-Ping, Rasch, Malte J., Liu, Zuoguang, Solomon, Paul, Brew, Kevin, Cheng, Kangguo, Ok, Injo, Chan, Victor, Longstreet, Michael, Kim, Wanki, Bruce, Robert L., Cheng, Cheng-Wei, Saulnier, Nicole, Narayanan, Vijay
Published in Advanced intelligent systems (01.05.2022)
Published in Advanced intelligent systems (01.05.2022)
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Journal Article
Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability
Zuoguang Liu, Gluschenkov, Oleg, Niimi, Hiroaki, Bei Liu, Juntao Li, Demarest, James, Mochizuki, Shogo, Adusumilli, Praneet, Raymond, Mark, Carr, Adra, Shaoyin Chen, Yun Wang, Jagannathan, Hemanth, Yamashita, Tenko
Published in 2017 Symposium on VLSI Technology (01.06.2017)
Published in 2017 Symposium on VLSI Technology (01.06.2017)
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Conference Proceeding
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET
Miaomiao Wang, Zuoguang Liu, Yamashita, Tenko, Stathis, James H., Chia-yu Chen
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
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Conference Proceeding
High-Quality Al2O3 for Low-Voltage High-Speed High-Temperature (Up to 250 °C) Nonvolatile Memory Technology
SHARON CUI, PENG, Cheng-Yi, WENQI ZHANG, XIAO SUN, JIE YANG, ZUOGUANG LIU, KORNBLUM, Lior, EIZENBERG, Moshe, MA, T. P
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
High-Quality \hbox\hbox for Low-Voltage High-Speed High-Temperature (Up to 250 ^\hbox ) Nonvolatile Memory Technology
Cui, Sharon, Cheng-Yi Peng, Wenqi Zhang, Xiao Sun, Jie Yang, Zuoguang Liu, Kornblum, Lior, Eizenberg, Moshe, Ma, T P
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor
Jingyun Zhang, Ando, Takashi, Chun Wing Yeung, Miaomiao Wang, Ohseong Kwon, Galatage, Rohit, Chao, Robin, Loubet, Nicolas, Bum Ki Moon, Ruqiang Bao, Vega, Reinaldo A., Juntao Li, Chen Zhang, Zuoguang Liu, Myunggil Kang, Xin Miao, Junli Wang, Kanakasabapathy, Sivananda, Basker, Veeraraghavan S., Jagannathan, Hemanth, Yamashita, Tenko
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
FinFET External Resistance Analysis by Extended Shift-and-Ratio Method
Zhang, Chen, Liu, Zuoguang, Miao, Xin, Yamashita, Tenko
Published in IEEE transactions on electron devices (01.08.2018)
Published in IEEE transactions on electron devices (01.08.2018)
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Journal Article
Integrated dual SPE processes with low contact resistivity for future CMOS technologies
Heng Wu, Soon-Cheon Seo, Chengyu Niu, Wei Wang, Tsutsui, Gen, Gluschenkov, Oleg, Zuoguang Liu, Petrescu, Alexandru, Carr, Adra, Choi, Sam, Tsai, Stan, Chanro Park, Seshadri, Indira, Desilva, Anuja, Arceo, Abraham, Yang, George, Sankarapandian, Muthumanickam, Prindle, Chris, Akarvardar, Kerem, Durfee, Curtis, Jie Yang, Adusumilli, Praneet, Miao, Bruce, Strane, Jay, Kleemeier, Walter, Raymond, Mark, Choi, Kisik, Fee-li Lie, Yamashita, Tenko, Knorr, Andreas, Gupta, Dinesh, Dechao Guo, Divakaruni, Rama, Huiming Bu, Khare, Mukesh
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
Improved Air Spacer for Highly Scaled CMOS Technology
Cheng, Kangguo, Park, Chanro, Wu, Heng, Li, Juntao, Nguyen, Son, Zhang, Jingyun, Wang, Miaomiao, Mehta, Sanjay, Liu, Zuoguang, Conti, Richard, Loubet, Nicolas J., Frougier, Julien, Greene, Andrew, Yamashita, Tenko, Haran, Balasubramanian, Divakaruni, Rama
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
Tsutsui, Gen, Ruqiang Bao, Kwan-yong Lim, Robison, Robert R., Vega, Reinaldo A., Jie Yang, Zuoguang Liu, Miaomiao Wang, Gluschenkov, Oleg, Chun Wing Yeung, Watanabe, Koji, Bentley, Steven, Niimi, Hiroaki, Liu, Derrick, Huimei Zhou, Siddiqui, Shariq, Hoon Kim, Galatage, Rohit, Venigalla, Rajasekhar, Raymond, Mark, Adusumilli, Praneet, Mochizuki, Shogo, Devarajan, Thamarai S., Miao, Bruce, Bei Liu, Greene, Andrew, Shearer, Jeffrey, Montanini, Pietro, Strane, Jay W., Prindle, Christopher, Miller, Eric R., Fronheiser, Jody, Niu, Chengyu C., Kisup Chung, Kelly, James J., Jagannathan, Hemanth, Kanakasabapathy, Sivananda, Karve, Gauri, Fee Li Lie, Oldiges, Philip, Narayanan, Vijay, Hook, Terence B., Knorr, Andreas, Gupta, Dinesh, Guo, Dechao, Divakaruni, Rama, Huiming Bu, Khare, Mukesh
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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Conference Proceeding
Direct Partition Measurement of Parasitic Resistance Components in Advanced Transistor Architectures
Liu, Zuoguang, Wu, Heng, Zhang, Chen, Miao, Xin, Zhou, Huimei, Southwick, Richard, Yamashita, Tenko, Guo, Dechao
Published in 2019 Symposium on VLSI Technology (01.06.2019)
Published in 2019 Symposium on VLSI Technology (01.06.2019)
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Conference Proceeding
Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
Cheng, Kangguo, Park, Chanro, Wu, Heng, Li, Juntao, Nguyen, Son, Zhang, Jingyun, Wang, Miaomiao, Mehta, Sanjay, Liu, Zuoguang, Conti, Richard, Loubet, Nicolas, Frougier, Julien, Greene, Andrew, Yamashita, Tenko, Haran, Bala, Divakaruni, Rama
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
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Conference Proceeding
Evaluation of a new interferon-gamma release assay and comparison to tuberculin skin test during a tuberculosis outbreak
Song, Qisheng, Guo, Huishan, Zhong, Hui, Liu, Zuoguang, Chen, Xiuqin, Wang, Cui, Touzjian, Neal, Lv, Yichen, Lu, Xiwei, Wang, Qi
Published in International journal of infectious diseases (01.07.2012)
Published in International journal of infectious diseases (01.07.2012)
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Journal Article
Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics
Reiner, James W., Cui, Sharon, Liu, Zuoguang, Wang, Miaomiao, Ahn, Charles H., Ma, T. P.
Published in Advanced materials (Weinheim) (20.07.2010)
Published in Advanced materials (Weinheim) (20.07.2010)
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Journal Article
High-Quality [Formula Omitted] for Low-Voltage High-Speed High-Temperature (Up to 250 [Formula Omitted]) Nonvolatile Memory Technology
Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T. P
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
High-Quality hbox Al 2 hbox O 3 for Low-Voltage High-Speed High-Temperature (Up to 250 [compfn] hbox C ) Nonvolatile Memory Technology
Cui, Sharon, Peng, Cheng-Yi, Zhang, Wenqi, Sun, Xiao, Yang, Jie, Liu, Zuoguang, Kornblum, Lior, Eizenberg, Moshe, Ma, T P
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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