Search Results - "Liu, Zong-Shun" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

by Liang, Feng, Zhao, De-Gang, Jiang, De-Sheng, Liu, Zong-Shun, Zhu, Jian-Jun, Chen, Ping, Yang, Jing, Liu, Wei, Liu, Shuang-Tao, Xing, Yao, Zhang, Li-Qun, Wang, Wen-Jie, Li, Mo, Zhang, Yuan-Tao, Du, Guo-Tong
Published in Japanese Journal of Applied Physics (01.07.2018)

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Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells

Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells

by Yang, Jing, Huang, Yu-Jie, Liu, Zong-Shun, Zhang, Yu-Heng, Liang, Feng, Zhao, De-Gang
Published in Optics letters (01.03.2024)

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Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN compound contact layer

by 李晓静赵德刚江德生陈平朱建军刘宗顺乐伶聪杨静何晓光
Published in Chinese physics B (01.11.2015)

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New mechanisms of cavity facet degradation for GaN-based laser diodes

New mechanisms of cavity facet degradation for GaN-based laser diodes

by Wang, Xiao-Wei, Liu, Zong-Shun, Zhao, De-Gang, Chen, Ping, Liang, Feng, Yang, Jing
Published in Journal of applied physics (14.06.2021)

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Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

Temperature-dependent photoluminescence spectra of GaN epitaxial layer grown on Si (111) substrate

by Zhao, Dan-Mei, Zhao, De-Gang, Jiang, De-Sheng, Liu, Zong-Shun, Zhu, Jian-Jun, Chen, Ping, Liu, Wei, Li, Xiang, Shi, Ming
Published in Chinese physics B (01.10.2015)

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Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

by Liu, Wei, Zhao, De-Gang, Jiang, De-Sheng, Chen, Ping, Liu, Zong-Shun, Zhu, Jian-Jun, Li, Xiang, Liang, Feng, Liu, Jian-Ping, Yang, Hui
Published in Chinese physics B (01.12.2015)

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Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity

Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity

by Yang, Jing, Zhao, De-Gang, Jiang, De-Sheng, Chen, Ping, Zhu, Jian-Jun, Liu, Zong-Shun, Le, Ling-Cong, He, Xiao-Guang, Li, Xiao-Jing, Zhang, Li-Qun, Liu, Jian-Ping, Yang, Hui
Published in IEEE journal of photovoltaics (01.03.2016)

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Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage

by 侍铭陈平赵德刚江德生郑军成步文朱建军刘宗顺刘炜李翔赵丹梅王启明刘建平张书明杨辉
Published in Chinese physics B (01.05.2015)

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Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

by 李晓静赵德刚江德生陈平朱建军刘宗顺乐伶聪杨静何晓光张立群刘建平张书明杨辉
Published in Chinese physics B (01.09.2015)

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Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure

by 何晓光赵德刚江德生朱建军陈平刘宗顺乐伶聪杨静李晓静张书明杨辉
Published in Chinese physics B (01.09.2015)

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The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells

The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells

by Li, Liang, Zhao, De-Gang, Jiang, De-Sheng, Liu, Zong-Shun, Chen, Ping, Wu, Liang-Liang, Le, Ling-Cong, Wang, Hui, Yang, Hui
Published in Chinese physics letters (01.02.2013)

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A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

by Chen, Ping, Zhao, De-Gang, Feng, Mei-Xin, Jiang, De-Sheng, Liu, Zong-Shun, Zhang, Li-Qun, Li, De-Yao, Liu, Jian-Ping, Wang, Hui, Zhu, Jian-Jun, Zhang, Shu-Ming, Zhang, Bao-Shun, Yang, Hui
Published in Chinese physics letters (01.10.2013)

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Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si

Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si

by Zhang, Zhen-Zhuo, Yang, Jing, Zhao, De-Gang, Liang, Feng, Chen, Ping, Liu, Zong-Shun
Published in Chinese physics B (01.01.2023)

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The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells

by 李亮赵德刚江德生刘宗顺陈平吴亮亮乐伶聪王辉杨辉
Published in Chinese physics B (01.06.2013)

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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

by 杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉
Published in Chinese physics B (01.06.2014)

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Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

by 杨静赵德刚江德生刘宗顺陈平李亮吴亮亮乐伶聪李晓静何晓光王辉朱建军张书明张宝顺杨辉
Published in Chinese physics B (01.09.2013)

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Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes

Influences of polarization effect and p-region doping concentration on the photocurrent response of solar-blind p—i—n avalanche photodiodes

by Li, Xiao-Jing, Zhao, De-Gang, Jiang, De-Sheng, Liu, Zong-Shun, Chen, Ping, Wu, Liang-Liang, Li, Liang, Le, Ling-Cong, Yang, Jing, He, Xiao-Guang, Wang, Hui, Zhu, Jian-Jun, Zhang, Shu-Ming, Zhang, Bao-Shun, Yang, Hui
Published in Chinese physics B (01.02.2014)

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Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN

Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN

by Zeng, Chang, Zhang, Shu-Ming, Wang, Hui, Liu, Jian-Ping, Wang, Huai-Bing, Li, Zeng-Cheng, Feng, Mei-Xin, Zhao, De-Gang, Liu, Zong-Shun, Jiang, De-Sheng, Yang, Hui
Published in Chinese physics letters (01.01.2012)

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The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition

by 乐伶聪赵德刚吴亮亮邓懿江德生朱建军刘宗顺王辉张书明张宝顺杨辉
Published in Chinese physics B (01.12.2011)

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Simulation of the light extraction efficiency of nanostructure light-emitting diodes

Simulation of the light extraction efficiency of nanostructure light-emitting diodes

by 朱继红王良吉张书明王辉赵德刚朱建军刘宗顺江德生杨辉
Published in Chinese physics B (01.07.2011)

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