A compact LDD MOSFET I-V model based on nonpinned surface potential
Jang, Sheng-Lyang, Liu, Shau-Shen, Sheu, Chorng-Jye
Published in IEEE transactions on electron devices (01.12.1998)
Published in IEEE transactions on electron devices (01.12.1998)
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Journal Article
An analytical fully-depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model considering the effects of self-heating, source/drain resistance, impact-ionization, and parasitic bipolar junction transistor
HU, M.-C, JANG, S.-L, CHEN, Y.-S, LIU, S.-S, LIN, J.-M
Published in Japanese Journal of Applied Physics (01.05.1997)
Published in Japanese Journal of Applied Physics (01.05.1997)
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Journal Article
A simple, analytical and complete deep-submicrometer fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model considering velocity overshoot
JANG, S.-L, HU, M.-C, LIU, S.-S, CHEN, Y.-S
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Journal Article
A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors
Published in Japanese Journal of Applied Physics
(01.05.1998)
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Journal Article
An analytical symmetric double-gate SOI MOSFET model
JIOU, HONG-KEE, JANG, SHENG-LYANG, LIU, SHAU-SHEN
Published in International journal of electronics (01.06.1999)
Published in International journal of electronics (01.06.1999)
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Journal Article
Compact LDD nMOSFET degradation model
Liu, S.-S., Jang, S.-L., Chyau, C.-G.
Published in IEEE transactions on electron devices (01.07.1998)
Published in IEEE transactions on electron devices (01.07.1998)
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Journal Article