A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications
Cristoloveanu, S., Munteanu, D., Liu, M.S.T.
Published in IEEE transactions on electron devices (01.05.2000)
Published in IEEE transactions on electron devices (01.05.2000)
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Journal Article
Evidence for angular effects in proton-induced single-event upsets
Reed, R.A., Marshall, P.W., Kim, H.S., McNulty, P.J., Fodness, B., Jordan, T.A., Reedy, R., Tabbert, C., Liu, M.S.T., Heikkila, W., Buchner, S., Ladbury, R., LaBel, K.A.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND
Ying Li, Guofu Niu, Cressler, J.D., Patel, J., Marshall, P.W., Kim, H.S., Liu, M.S.T., Reed, R.A., Palmer, M.J.
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
Proton radiation effects in 0.35 [micro]m partially depleted SOI MOSFETs fabricated on UNIBOND
Li, Ying, Niu, Guofu, Cressler, J.D, Patel, J, Marshall, P.W, Kim, H.S, Liu, M.S.T, Reed, R.A, Palmer, M.J
Published in IEEE transactions on nuclear science (01.12.2002)
Published in IEEE transactions on nuclear science (01.12.2002)
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Journal Article
Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs
Duan, F.L., Ioannou, D.E., Jenkins, W.C., Hughes, H.L., Liu, M.S.T.
Published in 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) (1998)
Published in 1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173) (1998)
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