Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels
Gupta, Chirag, Chan, Silvia H., Lund, Cory, Agarwal, Anchal, Koksaldi, Onur S., Liu, Junquian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.
Published in Applied physics express (01.12.2016)
Published in Applied physics express (01.12.2016)
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Journal Article
In Situ O xide, G aN Interlayer-Based Vertical Trench MOS FET ( OG-FET ) on Bulk GaN substrates
Gupta, Chirag, Lund, Cory, Chan, Silvia H., Agarwal, Anchal, Liu, Junquian, Enatsu, Yuuki, Keller, Stacia, Mishra, Umesh K.
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
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Journal Article