Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's
Williams, S.C., Kim, K.W., Littlejohn, M.A., Holton, W.C.
Published in IEEE transactions on electron devices (01.08.1999)
Published in IEEE transactions on electron devices (01.08.1999)
Get full text
Journal Article
Scaling trends for device performance and reliability in channel-engineered n-MOSFETs
Williams, S.C., Hulfachor, R.B., Kim, K.W., Littlejohn, M.A., Holton, W.C.
Published in IEEE transactions on electron devices (01.01.1998)
Published in IEEE transactions on electron devices (01.01.1998)
Get full text
Journal Article
Valence band parameters of wurtzite materials
Jeon, J.-B., Sirenko, Yu.M., Kim, K.W., Littlejohn, M.A., Stroscio, M.A.
Published in Solid state communications (1996)
Published in Solid state communications (1996)
Get full text
Journal Article
A new device design methodology for manufacturability
Lu, J.-C., Holton, W.C., Fenner, J.S., Williams, S.C., Kim, K.W., Hartford, A.H., Chen, D., Roze, K., Littlejohn, M.A.
Published in IEEE transactions on electron devices (01.03.1998)
Published in IEEE transactions on electron devices (01.03.1998)
Get full text
Journal Article
Analysis of delta-doped and uniformly doped AlGaAs/GaAs HEMT's by ensemble Monte Carlo simulations
Kim, K.W., Tian, H., Littlejohn, M.A.
Published in IEEE transactions on electron devices (01.08.1991)
Published in IEEE transactions on electron devices (01.08.1991)
Get full text
Journal Article
Two-dimensional analysis of short-channel delta-doped GaAs MESFETs
Tian, H., Kim, K.W., Littlejohn, M.A., Bedair, S.M., Witkowski, L.C.
Published in IEEE transactions on electron devices (01.09.1992)
Published in IEEE transactions on electron devices (01.09.1992)
Get full text
Journal Article
Efficient ohmic boundary conditions for the Monte Carlo simulation of electron transport
Woolard, D.L., Hong Tian, Littlejohn, M.A., Kim, K.W.
Published in IEEE transactions on electron devices (01.04.1994)
Published in IEEE transactions on electron devices (01.04.1994)
Get full text
Journal Article
Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs
Tian, H., Kim, K.W., Hauser, J.R., Masnari, N.A., Littlejohn, M.A.
Published in Solid-state electronics (01.03.1995)
Published in Solid-state electronics (01.03.1995)
Get full text
Journal Article