Properties of Si quantum dot/SiOx porous film structures synthesized using hydrogen fluoride technology
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Published in Modern electronic materials (01.03.2015)
Published in Modern electronic materials (01.03.2015)
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IR study of short-range and local order in SiO2 and SiOx films
LISOVSKII, I. P, LITOVCHENKO, V. G, LOZINSKII, V. B, FROLOV, S. I, FLIETNER, H, FUSSEL, W, SCHMIDT, E. G
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Published in Journal of non-crystalline solids (01.07.1995)
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Conference Proceeding
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Radiation properties of silicon metal-oxide-semiconductor structures with zinc-doped oxides
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Published in Japanese Journal of Applied Physics (01.10.1994)
Published in Japanese Journal of Applied Physics (01.10.1994)
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Journal Article
PHOTODETECOR
DMITRUK NIKOLAJ L,SU, MEDVID ARTUR P,SU, LITOVCHENKO VLADIMIR G,SU, EROKHIN ANATOLIJ K,SU
Year of Publication 30.09.1984
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Year of Publication 30.09.1984
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UNIT FOR CELL CULTURING IN MONOLAYER
LEZHNEV ENRIK ,SU, PANKRATOV VYACHESLAV P,SU, KOLODIJ ELENA E,SU, LITOVCHENKO VLADIMIR G,SU
Year of Publication 15.05.1980
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Year of Publication 15.05.1980
Patent