Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact
García-Sánchez, S, Pérez, S, Íñiguez-de-la-Torre, I, García-Vasallo, B, Huo, L, Lingaparthi, R, Nethaji, D, Radhakrishnan, K, Abou Daher, M, Lesecq, M, González, T, Mateos, J
Published in Journal of physics. D, Applied physics (06.01.2025)
Published in Journal of physics. D, Applied physics (06.01.2025)
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Journal Article
On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes
Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, L., Lingaparthi, R., Nethaji, D., Radhakrishnan, K., Iniguez-de-la-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T., Mateos, J.
Published in IEEE transactions on electron devices (01.07.2023)
Published in IEEE transactions on electron devices (01.07.2023)
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Journal Article
Non-linear thermal resistance model for the simulation of high power GaN-based devices
García-Sánchez, S, Íñiguez-de-la-Torre, I, Pérez, S, Ranjan, K, Agrawal, M, Lingaparthi, R, Nethaji, D, Radhakrishnan, K, Arulkumaran, S, Ng, G I, González, T, Mateos, J
Published in Semiconductor science and technology (01.05.2021)
Published in Semiconductor science and technology (01.05.2021)
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Journal Article
THz Oscillation in Doped-GaN Based Planar Gunn Diode with the T-shape Channel
Huo, Lili, Lingaparthi, R., Shabdurasulov, K., Dharmarasu, N., Radhakrishnan, K., Garcia-Sanchez, S., Mateos, J.
Published in 2023 18th European Microwave Integrated Circuits Conference (EuMIC) (18.09.2023)
Published in 2023 18th European Microwave Integrated Circuits Conference (EuMIC) (18.09.2023)
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Conference Proceeding
In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications
Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Agrawal, M.
Published in Thin solid films (31.08.2020)
Published in Thin solid films (31.08.2020)
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Journal Article
Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
Mateos, J., Garcia-Sanchez, S., Daher, M. Abou, Lesecq, M., Huo, L., Lingaparthi, R., Nethaji, D., Radhakrishnan, K., Iniguez-de-La-Torre, I., Vasallo, B. G., Perez, S., Gonzalez, T.
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
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Conference Proceeding
Effects of Oxygen Annealing of β-Ga2O3 Epilayers on the Properties of Vertical Schottky Barrier Diodes
Lingaparthi, R., Thieu, Q. T., Sasaki, K., Takatsuka, A., Otsuka, F., Yamakoshi, S., Kuramata, A.
Published in ECS journal of solid state science and technology (17.01.2020)
Published in ECS journal of solid state science and technology (17.01.2020)
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Journal Article
Effects of Oxygen Annealing of β -Ga 2 O 3 Epilayers on the Properties of Vertical Schottky Barrier Diodes
Lingaparthi, R., Thieu, Q. T., Sasaki, K., Takatsuka, A., Otsuka, F., Yamakoshi, S., Kuramata, A.
Published in ECS journal of solid state science and technology (17.01.2020)
Published in ECS journal of solid state science and technology (17.01.2020)
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Journal Article