Cubic polytype inclusions in 4H–SiC
Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.
Published in Journal of applied physics (01.02.2003)
Published in Journal of applied physics (01.02.2003)
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Journal Article
A new type of quantum wells: stacking faults in silicon carbide
Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.
Published in Microelectronics (01.05.2003)
Published in Microelectronics (01.05.2003)
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Journal Article
Conference Proceeding
Stacking faults in silicon carbide
Iwata, H.P, Lindefelt, U, Öberg, S, Briddon, P.R
Published in Physica. B, Condensed matter (31.12.2003)
Published in Physica. B, Condensed matter (31.12.2003)
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Journal Article
Theoretical study of planar defects in silicon carbide
Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R
Published in Journal of physics. Condensed matter (2002)
Published in Journal of physics. Condensed matter (2002)
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Journal Article
Conference Proceeding
Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC
Iwata, H.P., Lindefelt, Ulf, Oberg, S., Briddon, P.R.
Published in Journal of applied physics (2003)
Published in Journal of applied physics (2003)
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Journal Article
Ab initio study of 3C inclusions and stacking fault–stacking fault interactions in 6H-SiC
Iwata, H. P., Lindefelt, U., Öberg, S., Briddon, P. R.
Published in Journal of applied physics (15.10.2003)
Published in Journal of applied physics (15.10.2003)
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Journal Article
Study of avalanche breakdown and impact ionization in 4H silicon carbide
Konstantinov, A. O., Wahab, Q., Nordell, N., Lindefelt, U.
Published in Journal of electronic materials (01.04.1998)
Published in Journal of electronic materials (01.04.1998)
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Journal Article
Interband tunneling description of holes in Wurtzite GaN at high electric fields
Hjelm, Mats, Martinez, Antonio, Nilsson, Hans-Erik, Lindefelt, Ulf
Published in Journal of computational electronics (01.09.2007)
Published in Journal of computational electronics (01.09.2007)
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Journal Article