Cubic polytype inclusions in 4H–SiC
Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.
Published in Journal of applied physics (01.02.2003)
Published in Journal of applied physics (01.02.2003)
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Journal Article
Stacking faults in silicon carbide
Iwata, H.P, Lindefelt, U, Öberg, S, Briddon, P.R
Published in Physica. B, Condensed matter (31.12.2003)
Published in Physica. B, Condensed matter (31.12.2003)
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Journal Article
A model for doping-induced band gap narrowing in 3C-, 4H-, and 6H-SiC
Lindefelt, U
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.07.1999)
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Conference Proceeding
Theoretical study of planar defects in silicon carbide
Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R
Published in Journal of physics. Condensed matter (2002)
Published in Journal of physics. Condensed matter (2002)
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Journal Article
Conference Proceeding
Study of avalanche breakdown and impact ionization in 4H silicon carbide
Konstantinov, A. O., Wahab, Q., Nordell, N., Lindefelt, U.
Published in Journal of electronic materials (01.04.1998)
Published in Journal of electronic materials (01.04.1998)
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Journal Article
Ab initio study of 3C inclusions and stacking fault–stacking fault interactions in 6H-SiC
Iwata, H. P., Lindefelt, U., Öberg, S., Briddon, P. R.
Published in Journal of applied physics (15.10.2003)
Published in Journal of applied physics (15.10.2003)
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Journal Article
Monte Carlo study of hole mobility in Al-doped 4H–SiC
Martinez, A., Lindefelt, U., Hjelm, M., Nilsson, H.-E.
Published in Journal of applied physics (01.02.2002)
Published in Journal of applied physics (01.02.2002)
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Journal Article
A new type of quantum wells: stacking faults in silicon carbide
Iwata, Hisaomi, Lindefelt, Ulf, Öberg, Sven, Briddon, Patrick R.
Published in Microelectronics (01.05.2003)
Published in Microelectronics (01.05.2003)
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Conference Proceeding