Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality
Liang, Yan-Kui, Wu, Jui-Sheng, Teng, Chih-Yu, Ko, Hua-Lun, Luc, Quang-Ho, Su, Chun-Jung, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE electron device letters (01.09.2021)
Published in IEEE electron device letters (01.09.2021)
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Journal Article
Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
Hsu, Lung-Hsing, Lai, Yung-Yu, Tu, Po-Tsung, Langpoklakpam, Catherine, Chang, Ya-Ting, Huang, Yu-Wen, Lee, Wen-Chung, Tzou, An-Jye, Cheng, Yuh-Jen, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Published in Micromachines (Basel) (27.09.2021)
Published in Micromachines (Basel) (27.09.2021)
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Journal Article
Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition
Liang, Yan-Kui, Lin, Jing-Wei, Peng, Li-Chi, Hua, Yi Miao, Chou, Tsung-Te, Kei, Chi-Chung, Lu, Chun-Chieh, Huang, Huai-Ying, Yeong, Sai Hooi, Lin, Yu-Ming, Liu, Po-Tsun, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE transactions on electron devices (01.03.2023)
Published in IEEE transactions on electron devices (01.03.2023)
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Journal Article
Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
Weng, You-Chen, Hsiao, Ming-Yao, Lin, Chun-Hsiung, Lan, Yu-Pin, Chang, Edward-Yi
Published in Materials (26.04.2023)
Published in Materials (26.04.2023)
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Journal Article
Vertical GaN MOSFET Power Devices
Langpoklakpam, Catherine, Liu, An-Chen, Hsiao, Yi-Kai, Lin, Chun-Hsiung, Kuo, Hao-Chung
Published in Micromachines (Basel) (16.10.2023)
Published in Micromachines (Basel) (16.10.2023)
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Journal Article
The Evolution of Manufacturing Technology for GaN Electronic Devices
Liu, An-Chen, Tu, Po-Tsung, Langpoklakpam, Catherine, Huang, Yu-Wen, Chang, Ya-Ting, Tzou, An-Jye, Hsu, Lung-Hsing, Lin, Chun-Hsiung, Kuo, Hao-Chung, Chang, Edward Yi
Published in Micromachines (Basel) (23.06.2021)
Published in Micromachines (Basel) (23.06.2021)
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Journal Article
Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics
Liang, Yan-Kui, Li, Wei-Li, Zheng, Jun-Yang, Lin, Yu-Lon, Lu, Yu-Cheng, Chiu, Ching-Hua, Hsieh, Dong-Ru, Chou, Tsung-Te, Kei, Chi-Chung, Huang, Huai-Ying, Lin, Yu-Ming, Tseng, Yuan-Chieh, Chao, Tien-Sheng, Chang, Edward Yi, Lin, Chun-Hsiung
Published in IEEE electron device letters (01.10.2023)
Published in IEEE electron device letters (01.10.2023)
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Journal Article
Effects of Annealing Temperature on TiN/Hf0.5Zr0.5O2/TiN Ferroelectric Capacitor Prepared by In-Situ Like Consecutive Atomic Layer Deposition
Liang, Yan-Kui, Huang, Yi-Shuo, Peng, Li-Chi, Yang, Tsung-Ying, Young, Bo-Feng, Lu, Chun-Chieh, Yeong, Sai Hooi, Lin, Yu-Ming, Su, Chun-Jung, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE transactions on nanotechnology (2022)
Published in IEEE transactions on nanotechnology (2022)
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Journal Article
Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer
Hong, Kuo-Bin, Peng, Chun-Yen, Lin, Wei-Cheng, Chen, Kuan-Lun, Chen, Shih-Chen, Kuo, Hao-Chung, Chang, Edward Yi, Lin, Chun-Hsiung
Published in Micromachines (Basel) (23.02.2023)
Published in Micromachines (Basel) (23.02.2023)
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Journal Article
Modulating Light Emission Performance of PCSEL via GaN HEMT Driving Circuit
Hong, Yu-Heng, Liu, Ching-Yao, Chen, Jun-Da, Peng, Chun-Yen, Tang, Li-Chuan, Lu, Tien-Chang, Lin, Chun-Hsiung, Chieng, Wei-Hua, Chang, Edward, Chen, Shih-Chen, Kuo, Hao-Chung
Published in Crystals (Basel) (01.09.2022)
Published in Crystals (Basel) (01.09.2022)
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Journal Article
Validation of a [3H]Astemizole Binding Assay in HEK293 Cells Expressing HERG K+ Channels
Chiu, Peter J.S., Marcoe, Karen F., Bounds, Sidney E., Lin, Chun-Hsiung, Feng, Jin-Jye, Lin, Atsui, Cheng, Fong-Chi, Crumb, William J., Mitchell, Richard
Published in Journal of Pharmacological Sciences (2004)
Published in Journal of Pharmacological Sciences (2004)
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Journal Article
Performances Analysis for Core-Shell Si/InxGa1-xAs FinFET
Lu, Yu-Cheng, Chen, Kuan-Lun, Huang, Ping, Chen, Szu-Hung, Chen, Yu, Yi Chang, Edward, Lin, Chun-Hsiung
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
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Journal Article
Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With High Endurance Against Fatigue
Liang, Yan-Kui, Liu, Zhenhong, Cai, Zuocheng, Han, Xueyang, Huang, Huai-Ying, Lin, Yu-Ming, Yi Chang, Edward, Lin, Chun-Hsiung, Takenaka, Mitsuru, Toprasertpong, Kasidit, Takagi, Shinichi
Published in IEEE electron device letters (01.08.2024)
Published in IEEE electron device letters (01.08.2024)
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Journal Article
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability
Liang, Yan-Kui, Li, Wei-Li, Wang, Yong-Jyun, Peng, Li-Chi, Lu, Chun-Chieh, Huang, Huai-Ying, Yeong, Sai Hooi, Lin, Yu-Ming, Chu, Ying-Hao, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE electron device letters (01.09.2022)
Published in IEEE electron device letters (01.09.2022)
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Journal Article
Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications
Hieu, Le Trung, Hsu, Heng-Tung, Chiang, Chung-Han, Panda, Debashis, Lee, Ching-Ting, Lin, Chun-Hsiung, Chang, Edward Yi
Published in Semiconductor science and technology (01.02.2023)
Published in Semiconductor science and technology (01.02.2023)
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Journal Article