3D resistive RAM cell design for high-density storage class memory—a review
Hudec, Boris, Hsu, Chung-Wei, Wang, I-Ting, Lai, Wei-Li, Chang, Che-Chia, Wang, Taifang, Fröhlich, Karol, Ho, Chia-Hua, Lin, Chen-Hsi, Hou, Tuo-Hung
Published in Science China. Information sciences (01.06.2016)
Published in Science China. Information sciences (01.06.2016)
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Journal Article
Microstructure and grindability of as-cast Ti–Sn alloys
Hsu, Hsueh-Chuan, Lin, Hsi-Chen, Wu, Shih-Ching, Hong, Yu-Sheng, Ho, Wen-Fu
Published in Journal of materials science (01.04.2010)
Published in Journal of materials science (01.04.2010)
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Journal Article
Flexible One Diode--One Resistor Crossbar Resistive-Switching Memory
Huang, Jiun-Jia, Hou, Tuo-Hung, Hsu, Chung-Wei, Tseng, Yi-Ming, Chang, Wen-Hsiung, Jang, Wen-Yueh, Lin, Chen-Hsi
Published in Japanese Journal of Applied Physics (01.04.2012)
Published in Japanese Journal of Applied Physics (01.04.2012)
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Journal Article
Evaluation of low-fusing porcelain bonded to dental cast Ti–Zr alloys
Ho, Wen-Fu, Cheng, Chung-Hsiao, Chen, Wei-Kai, Wu, Shih-Ching, Lin, Hsi-Chen, Hsu, Hsueh-Chuan
Published in Journal of alloys and compounds (05.03.2009)
Published in Journal of alloys and compounds (05.03.2009)
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Journal Article
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
Lin, Kuan-Liang, Hou, Tuo-Hung, Lee, Yao-Jen, Chang, Jhe-Wei, Lin, Jun-Hung, Shieh, Jiann, Chou, Cheng-Tung, Lei, Tan-Fu, Chang, Wen-Hsiung, Jang, Wen-Yueh, Lin, Chen-Hsi
Published in Japanese Journal of Applied Physics (01.03.2013)
Published in Japanese Journal of Applied Physics (01.03.2013)
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Journal Article
Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
LIN, Chih-Yang, LIN, Chun-Chieh, HUANG, Chun-Hsing, LIN, Chen-Hsi, TSENG, Tseung-Yuen
Published in Surface & coatings technology (15.12.2007)
Published in Surface & coatings technology (15.12.2007)
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Conference Proceeding
Journal Article
Stable resistive switching behaviors of sputter deposited V-doped SrZrO3 thin films
LIN, Chun-Chieh, YU, Jung-Sheng, LIN, Chih-Yang, LIN, Chen-Hsi, TSENG, Tseung-Yuen
Published in Thin solid films (03.12.2007)
Published in Thin solid films (03.12.2007)
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Conference Proceeding
Journal Article
A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO 2 /Pt nonvolatile memory with 1T1R architecture
Wu, Ming-Chi, Jang, Wen-Yueh, Lin, Chen-Hsi, Tseng, Tseung-Yuen
Published in Semiconductor science and technology (13.06.2012)
Published in Semiconductor science and technology (13.06.2012)
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Journal Article
Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAM
WU, Ming-Chi, LIN, Yi-Wei, JANG, Wen-Yueh, LIN, Chen-Hsi, TSENG, Tseung-Yuen
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Effect of electrical-discharging on formation of nanoporous biocompatible layer on titanium
Peng, Pei-Wen, Ou, Keng-Liang, Lin, Hsi-Chen, Pan, Yung-Ning, Wang, Chau-Hsiang
Published in Journal of alloys and compounds (04.03.2010)
Published in Journal of alloys and compounds (04.03.2010)
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Journal Article
Resistive switching mechanisms of V-doped SrZrO3 memory films
LIN, Chun-Chieh, TU, Bing-Chung, LIN, Chao-Cheng, LIN, Chen-Hsi, TSENG, Tseung-Yuen
Published in IEEE electron device letters (01.09.2006)
Published in IEEE electron device letters (01.09.2006)
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Journal Article
Improvement of Resistive Switching Characteristics in SrZrO3 Thin Films With Embedded Cr Layer
LIN, Chih-Yang, LIN, Meng-Han, WU, Ming-Chi, LIN, Chen-Hsi, TSENG, Tseung-Yuen
Published in IEEE electron device letters (01.10.2008)
Published in IEEE electron device letters (01.10.2008)
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Journal Article