Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing
Cai, Hongjie, Qian, Kun, An, Yuying, Lin, Guangyang, Wu, Songsong, Ding, Haokun, Huang, Wei, Chen, Songyan, Wang, Jianyuan, Li, Cheng
Published in Journal of alloys and compounds (25.05.2022)
Published in Journal of alloys and compounds (25.05.2022)
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Journal Article
Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing
Lin, Guangyang, Qian, Kun, Cai, Hongjie, Zhao, Haochen, Xu, Jianfang, Chen, Songyan, Li, Cheng, Hickey, Ryan, Kolodzey, James, Zeng, Yuping
Published in Journal of alloys and compounds (15.09.2022)
Published in Journal of alloys and compounds (15.09.2022)
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Journal Article
Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors
Huang, Zhiwei, Mao, Yichen, Lin, Guangyang, Yi, Xiaohui, Chang, Ailing, Li, Cheng, Chen, Songyan, Huang, Wei, Wang, Jianyuan
Published in Optics express (05.03.2018)
Published in Optics express (05.03.2018)
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Journal Article
Resistive switching properties in polycrystalline LiNbO3 thin films
Chen, Gongying, Zeng, Chao, Liao, Ye, Huang, Wei, Wang, Jianyuan, Lin, Guangyang, Li, Cheng, Chen, Songyan
Published in Applied physics express (01.05.2024)
Published in Applied physics express (01.05.2024)
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Journal Article
Detection of false data injection attack in power information physical system based on SVM–GAB algorithm
Xiong, Xiaoping, Hu, Siding, Sun, Di, Hao, Shaolei, Li, Hang, Lin, Guangyang
Published in Energy reports (01.08.2022)
Published in Energy reports (01.08.2022)
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Journal Article
P–i–n photodetector with active GePb layer grown by sputtering epitaxy
Yu, Jiulong, Lin, Guangyang, Xia, Shilong, Huang, Wei, Yang, Tianwei, Jiao, Jinlong, Liu, Xiangquan, Chen, Songyan, Li, Cheng, Zheng, Jun, Li, Jun
Published in Applied physics express (01.04.2024)
Published in Applied physics express (01.04.2024)
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Journal Article
High-quality Ge1−xSnx (x = 0–0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors
Xie, Changjiang, Li, Yue, Wu, Zhengjie, Wu, Songsong, Wang, Yixin, Lin, Guangyang, Li, Cheng, Cong, Hui, Xu, Chi, Xue, Chunlai
Published in APL materials (01.07.2024)
Published in APL materials (01.07.2024)
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Journal Article
InAs FinFETs Performance Enhancement by Superacid Surface Treatment
Yuping Zeng, Khandelwal, Sourabh, Shariar, Kazy F., Zijian Wang, Guangyang Lin, Qi Cheng, Peng Cui, Opila, Robert, Balakrishnan, Ganesh, Addamane, Sadhvikas, Taheri, Peyman, Kiriya, Daisuke, Hettick, Mark, Javey, Ali
Published in IEEE transactions on electron devices (01.04.2019)
Published in IEEE transactions on electron devices (01.04.2019)
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Journal Article
Improving the electrical performance of monolayer top-gated MoS2 transistors by post bis(trifluoromethane) sulfonamide treatment
Lin, Guangyang, Zhao, Meng-Qiang, Jia, Meng, Cui, Peng, Zhao, Haochen, Zhang, Jie, Gundlach, Lars, Liu, Xiaoshan, Johnson, A T Charlie, Zeng, Yuping
Published in Journal of physics. D, Applied physics (07.10.2020)
Published in Journal of physics. D, Applied physics (07.10.2020)
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Journal Article
Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing
Wang, Chen, Li, Cheng, Lin, Guangyang, Lu, Weifang, Wei, Jiangbin, Huang, Wei, Lai, Hongkai, Chen, Songyan, Di, Zengfeng, Zhang, Miao
Published in IEEE transactions on electron devices (01.09.2014)
Published in IEEE transactions on electron devices (01.09.2014)
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Journal Article
Impacts of ITO interlayer thickness on metal/n-Ge contacts
Huang, Zhiwei, Mao, Yichen, Lin, Guangyang, Wang, Yisen, Li, Cheng, Chen, Songyan, Huang, Wei, Xu, Jianfang
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.10.2017)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.10.2017)
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Journal Article
Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications
Lin, Guangyang, An, Yuying, Ding, Haokun, Zhao, Haochen, Wang, Jianyuan, Chen, Songyan, Li, Cheng, Hickey, Ryan, Kolodzey, James, Zeng, Yuping
Published in Nanophotonics (Berlin, Germany) (01.01.2023)
Published in Nanophotonics (Berlin, Germany) (01.01.2023)
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Journal Article
Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate
Chen, Ningli, Lin, Guangyang, Zhang, Lu, Li, Cheng, Chen, Songyan, Huang, Wei, Xu, Jianfang, Wang, Jianyuan
Published in Japanese Journal of Applied Physics (01.05.2017)
Published in Japanese Journal of Applied Physics (01.05.2017)
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Journal Article
Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
Lin, Guangyang, Chen, Ningli, Zhang, Lu, Huang, Zhiwei, Huang, Wei, Wang, Jianyuan, Xu, Jianfang, Chen, Songyan, Li, Cheng
Published in Materials (27.09.2016)
Published in Materials (27.09.2016)
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Journal Article
High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing
Wang, Chen, Li, Cheng, Wei, Jiangbin, Lin, Guangyang, Lan, Xiaoling, Chi, Xiaowei, Lu, Chao, Huang, Zhiwei, Chen, Chaowen, Huang, Wei, Lai, Hongkai, Chen, Songyan
Published in IEEE photonics technology letters (15.07.2015)
Published in IEEE photonics technology letters (15.07.2015)
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Journal Article
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing
Wang, Chen, Li, Cheng, Huang, Shihao, Lu, Weifang, Yan, Guangming, Lin, Guangyang, Wei, Jiangbin, Huang, Wei, Lai, Hongkai, Chen, Songyan
Published in Applied physics express (01.10.2013)
Published in Applied physics express (01.10.2013)
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Journal Article
An Equivalent Siding Mode Observer for Electric Vehicle Lithium Battery SOC Estimation
Nan, Wenzhi, Pang, Hui, Chen, Kaiqiang, Wang, Fengbin, Lin, Guangyang
Published in Journal of the Electrochemical Society (03.06.2024)
Published in Journal of the Electrochemical Society (03.06.2024)
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Journal Article
Ultrahigh Sensitive Phototransistor Based on MoSe 2 /Ge Mixed-Dimensional Heterojunction for Visible to Short-Wave Infrared Broadband Photodetection
Li, Haiying, Cai, Xinwei, Wang, Jianyuan, Lin, Guangyang, Li, Cheng
Published in IEEE transactions on electron devices (01.12.2023)
Published in IEEE transactions on electron devices (01.12.2023)
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Journal Article
Sub-60 mV/decade Switching via Hot Electron Transfer in Nanoscale GaN HEMTs
Cui, Peng, Lin, Guangyang, Zhang, Jie, Zeng, Yuping
Published in IEEE electron device letters (01.08.2020)
Published in IEEE electron device letters (01.08.2020)
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Journal Article
Comparative study of sodium and potassium compounds as promoters for growth of monolayer MoS 2 with high crystal quality on SiO 2 /Si substrate
Xiong, Jun, Wu, Qiang, Cai, Xinwei, Zhu, Yiming, Lin, Guangyang, Li, Cheng
Published in Journal of physics. D, Applied physics (11.10.2024)
Published in Journal of physics. D, Applied physics (11.10.2024)
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Journal Article