Search Results - "Lim, Hanjin" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes

by Pešić, Milan, Knebel, Steve, Geyer, Maximilian, Schmelzer, Sebastian, Böttger, Ulrich, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Mikolajick, Thomas, Schroeder, Uwe
Published in Journal of applied physics (14.02.2016)

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Journal Article

Effects of the flux-controlled cation off-stoichiometry in SrRuO3 grown by molecular beam epitaxy on its physical and electrical properties

Effects of the flux-controlled cation off-stoichiometry in SrRuO3 grown by molecular beam epitaxy on its physical and electrical properties

by Kim, Beomjong, Na, Byunghoon, Kwon, Youngnam, Jeong, Myoungho, Kim, Yongsung, Lim, Hanjin, Yoon, Euijoon
Published in Materials letters (15.12.2020)

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Journal Article

Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation

Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation

by Tamura, Atsushi, Jang, Seungwoo, Park, Young-Geun, Lim, Hanjin, Kita, Koji
Published in Solid-state electronics (01.11.2021)

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Journal Article

Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications

by Knebel, Steve, Pešić, Milan, Cho, Kyuho, Chang, Jaewan, Lim, Hanjin, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Muehle, Uwe, Schroeder, Uwe, Mikolajick, Thomas
Published in Journal of applied physics (14.06.2015)

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Journal Article

Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

by Song, Seokhwi, Kim, Eungju, Kim, Kyunghoo, Bae, Jangho, Lee, Jinho, Jung, Chang Hwa, Lim, Hanjin, Jeon, Hyeongtag
Published in ECS Advances (11.01.2024)

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Journal Article

Conduction barrier offset engineering for DRAM capacitor scaling

Conduction barrier offset engineering for DRAM capacitor scaling

by Pešić, Milan, Knebel, Steve, Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Kolomiiets, Nadiia, Afanas’ev, Valeri V., Mikolajick, Thomas, Schroeder, Uwe
Published in Solid-state electronics (01.01.2016)

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Journal Article

The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications

The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications

by Song, Hyoseok, Jeon, Heeyoung, Shin, Changhee, Shin, Seokyoon, Jang, Woochool, Park, Joohyun, Chang, Jaewan, Choi, Jae Hyoung, Kim, Younsoo, Lim, HanJin, Seo, Hyungtak, Jeon, Hyeongtag
Published in Thin solid films (30.11.2016)

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Journal Article

Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties

by Shin, Heecheol, Choi, Hyobin, Lim, Jaeseong, Lee, Wanggon, Mohit, Kumar, Kim, Younsoo, Jung, Hyung-Suk, Lim, Hanjin, Seo, Hyungtak
Published in Journal of Asian Ceramic Societies (03.07.2022)

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Journal Article

Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices

Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices

by LEE, Kong-Soo, HAN, Jae-Jong, LIM, Hanjin, NAM, Seokwoo, CHUNG, Chilhee, JEONG, Hong-Sik, PARK, Hyunho, JEONG, Hanwook, CHOI, Byoungdeog
Published in IEEE electron device letters (01.02.2012)

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Journal Article

Semiconductor device and semiconductor memory device including the same

Semiconductor device and semiconductor memory device including the same

by PARK JUNGMIN, LIM HANJIN
Year of Publication 26.04.2023

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Patent

Current-voltage characteristics of vertical diodes for next generation memories

Current-voltage characteristics of vertical diodes for next generation memories

by Hokyun An, Kong-Soo Lee, Yoongoo Kang, Seonghoon Jeong, Wonseok Yoo, Jae-Jong Han, Bonghyun Kim, Hanjin Lim, Seokwoo Nam, Gi-Tae Jeong, Ho-Kyu Kang, Chilhee Chung, Byoungdeog Choi
Published in 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2012)

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Conference Proceeding

semiconductor device and method of fabricating the same

semiconductor device and method of fabricating the same

by PARK JUNGMIN, LIM HANJIN, JUNG HYUNGSUK
Year of Publication 01.02.2024

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Patent

Al2O3 blocking layer inserted ZrO2 Metal-Insulator-Metal capacitor for the improved electrical and interfacial properties

Al2O3 blocking layer inserted ZrO2 Metal-Insulator-Metal capacitor for the improved electrical and interfacial properties

by Song, Hongseon, Kim, Dokyoung, Kang, Sangyeol, Jung, Hyungsuk, Lim, HanJin, Yong, Kijung
Published in Thin solid films (01.11.2020)

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Journal Article

Atomic layer deposition of molybdenum oxide using (NtBu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application

Atomic layer deposition of molybdenum oxide using (NtBu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application

by Lee, Seunghwan, Yang, Hae Lin, Kim, Beomseok, Lee, Jinho, Lim, Hanjin, Park, Jin-Seong
Published in Ceramics international (01.02.2023)

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Journal Article

Characteristics of High‐Crystallinity ZrO2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Characteristics of High‐Crystallinity ZrO2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

by Song, Seokhwi, Jung, Chanwon, Kim, Jisoo, Kim, Younsoo, Lim, Hanjin, Jeon, Hyeongtag
Published in Physica status solidi. A, Applications and materials science (01.01.2023)

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Journal Article

Characteristics of High‐Crystallinity ZrO 2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

Characteristics of High‐Crystallinity ZrO 2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition

by Song, Seokhwi, Jung, Chanwon, Kim, Jisoo, Kim, Younsoo, Lim, Hanjin, Jeon, Hyeongtag
Published in Physica status solidi. A, Applications and materials science (01.01.2023)

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Journal Article

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

by PARK JUNGMIN, LIM HANJIN, JUNG HYUNGSUK
Year of Publication 19.09.2023

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Patent

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

by PARK JUNGMIN, LIM HANJIN, JUNG HYUNGSUK
Year of Publication 19.09.2023

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Patent

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES

by PARK JUNGMIN, LIM HANJIN, JUNG HYUNGSUK
Year of Publication 30.05.2023

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Patent

A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications

A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications

by Yoon, Ara, Yang, Hae Lin, Lee, Sanghoon, Lee, Seunghwan, Kim, Beomseok, Jung, Changhwa, Lim, Hanjin, Park, Jin-Seong
Published in Ceramics international (15.04.2024)

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Journal Article

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